DataVXJournal of Materials SciencePaper
journal article·2023-06

Characterization of dislocations at the emission site by emission microscopy in GaN p–n diodes

Yukari Ishikawa, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yongzhao Yao, Kenta Watanabe, Takashi Okawa

Journal of Materials Science· Volume 58· Issue 22
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Source abstract

Abstract

The character of dislocations at the emission sites observed in p–n diodes on (0001) GaN by emission microscopy under reverse biasing is investigated. The dislocation is a c-type threading dislocation formed by the reaction of c+a and -a dislocations. The c-type threading dislocation is closed-core, screw type, and helical, formed by vacancy desorption with a 0.2 μm cavity approximately 2 μm beneath the surface. The band-edge photoluminescence under multiphoton excitation at the dislocation in the p layer is brighter than that of the surrounding non-defective area.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and interfaces · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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