Spontaneous room-temperature formation of broccoli-like Ag–GeTe nanostructures assisting filamentary resistive switching
Source abstract
Abstract
We report on a novel fabrication of nanostructures of silver (Ag) germanium telluride (GeTe) at room temperature and the control of resistive switching using them. We systematically fabricated Ag seed nanoparticles of various sizes by thermal annealing and demonstrated that deposition of GeTe by RF sputtering onto the Ag seed nanoparticles spontaneously produced nanostructures including broccoli-like, hollow nanostructures comprised predominantly of nanocrystalline grains of Ag, Ag3Ge, Ag2Te, and Ag5Te3. The nanostructure shape and the constituent crystalline phases depend on the amount of Ag used for the seeds. The nanostructure formation followed nanoscale phase separation and crystallization into an unexpected phase from the phase diagram, including a metastable state. The structural changes were characteristic of the Ag nanoparticles; no significant structural changes occurred for GeTe deposition onto Ag films. As an application of the spontaneously formed nanostructures, we demonstrated a control resistive switching when a voltage was applied with a lateral Ag electrode pair deposited onto the top. We found that the Ag amount used for the seed formation determined the polarity of resistive switching and the SET/RESET voltages. By increasing the Ag amount, the resistive switching turned from the clockwise direction to the counter-clockwise direction, and the SET/RESET voltages were lowered.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Advanced Thermoelectric Materials and Devices · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (48)
Show source-provided references
1. Bruns G, Merkelbach P, Schlockermann C, Salinga M, Wuttig M, Happ TD, Philipp JB, Kund M (2010) Nanosecond switching in GeTe phase change memory cells. Appl Phys Lett 95(4):043108-1–043108-3. https://doi.org/10.1063/1.319167010.1063/1.3191670 ↗
2. Perniola L, Sousa V, Fantini A et al (2010) Electrical behavior of phase-change memory cells based on GeTe. IEEE Electron Device Lett 31(5):488–490. https://doi.org/10.1109/LED.2010.204413610.1109/LED.2010.2044136 ↗
3. Nguyen TA, Backes D, Singh A et al (2016) Topological states and phase transitions in Sb2Te3–GeTe multilayers. Sci Rep 6:27716-1–27716-6. https://doi.org/10.1038/srep2771610.1038/srep27716 ↗
4. Takagaki Y, Saito Y, Tominaga J (2016) Manipulation of the presence of helical surface states of topological insulators using Sb2Te3–GeTe superlattices. Appl Phys Lett 108(11):112102-1–112102-5. https://doi.org/10.1063/1.494405010.1063/1.4944050 ↗
5. Ramesh K, Asokan S, Sangunni KS, Gopal ESR (1999) Electrical switching in germanium telluride glasses doped with Cu and Ag. Appl Phys A 69(4):421–425. https://doi.org/10.1007/s00339005102510.1007/s003390051025 ↗
6. Kim CJ, Yoon SG, Choi KJ, Ryu SO, Yoon SM, Lee NY, Yu BG (2006) Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory. J Vac Sci Tech B 24(2):721–724. https://doi.org/10.1116/1.218026010.1116/1.2180260 ↗
7. Lee SJ, Yoon SG, Choi KJ, Ryu SO, Yoon SM, Lee NY, Yu BG (2006) Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications. J Vac Sci Tech B 24(5):2312–2316. https://doi.org/10.1116/1.234888410.1116/1.2348884 ↗
8. Xu H, Liu Z, Xia Y, Chen L, Zhu H, Guo H, Yin J (2011) Phase change behavior in Ag10Ge15Te75 and the electrolytic resistive switching in both amorphous and crystalline Ag10Ge15Te75 films. Electrochem Solid-State Lett 14(2):H99–H102. https://doi.org/10.1149/1.352322210.1149/1.3523222 ↗
9. Xu L, Li Y, Yu NN, Zhong YP, Miao XS (2015) Local order origin of thermal stability enhancement in amorphous Ag doping GeTe. Appl Phys Lett 106(3):031904-1–031904-5. https://doi.org/10.1063/1.490633210.1063/1.4906332 ↗
10. Kumar P, Chander R, Sathiaraj TS, Thangaraj R (2015) Effect of Ag photo-doping on structural, optical and phase change properties of GeTe chalcogenide films. Mater Sci Semicond Process 38:188–191. https://doi.org/10.1016/j.mssp.2015.04.02710.1016/j.mssp.2015.04.027 ↗
11. Hasegawa T, Terabe K, Tsuruoka T, Aono M (2012) Atomic switch: atom/ion movement controlled devices for beyond Von-Neumann computers. Adv Mater 24(2):252–267. https://doi.org/10.1002/adma.20110259710.1002/adma.201102597 ↗
12. Valov I, Waser R, Jameson JR, Kozicki MN (2011) Electrochemical metallization memories—fundamentals, applications, prospects. Nanotechnology 22(25):254003-1–254003-22. https://doi.org/10.1088/0957-4484/22/25/25400310.1088/0957-4484/22/25/254003 ↗
13. Waser R, Dittmann R, Staikov G, Szot K (2009) Redox-based resistive switching memories—nanoionic mechanisms, prospects, and challenges. Adv Mater 21:2632–2663. https://doi.org/10.1002/adma.20090037510.1002/adma.200900375 ↗
14. Barbera SL, Vuillaume D, Alibart F (2015) Filamentary switching: synaptic plasticity through device volatility. ACS Nano 9:941–949. https://doi.org/10.1021/nn506735m10.1021/nn506735m ↗
15. Li Y, Zhong Y, Zhang J, Xu L, Wang Q, Sun H, Tong H, Cheng X, Miao X (2014) Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems. Sci Rep 4:4906-1–4906-7. https://doi.org/10.1038/srep0490610.1038/srep04906 ↗
16. Kanehira T, Imanishi Y, Hayashi H, Nakaoka T (2016) Harmonic multiplication based on Ge–Sb–Te resistive switching devices. Elect Lett 52:1811–1833. https://doi.org/10.1049/el.2016.201610.1049/el.2016.2016 ↗
17. Srinivasan B, Gautier R, Gucci F et al (2017) Impact of coinage metal insertion on the thermoelectric properties of GeTe solid-state solutions. J Phys Chem C 122:227–235. https://doi.org/10.1021/acs.jpcc.7b1083910.1021/acs.jpcc.7b10839 ↗
18. Gonçalves AP, Lopes EB, Rouleau O, Godart C (2010) Conducting glasses as new potential thermoelectric materials: the Cu–Ge–Te case. J Mater Chem 20:1516–1521. https://doi.org/10.1039/b908579c10.1039/B908579C ↗
19. Srinivasan B, Boussard-Pledel C, Dorcet V et al (2017) Thermoelectric properties of highly-crystallized Ge–Te–Se glasses doped with Cu/Bi. Materials 10:328-1–328-14. https://doi.org/10.3390/ma1004032810.3390/ma10040328 ↗
20. Wood C (1988) Materials for thermoelectric energy conversion. Rep Prog Phys 51(4):459–539. https://doi.org/10.1088/0034-4885/51/4/00110.1088/0034-4885/51/4/001 ↗
21. Snyder GJ, Toberer ES (2008) Complex thermoelectric materials. Nat Mater 7(2):105–114. https://doi.org/10.1038/nmat209010.1038/nmat2090 ↗
22. Levin EM, Besser MF, Hanus R (2013) Electronic and thermal transport in GeTe: a versatile base for thermoelectric materials. J Appl Phys 114(8):083713-1–083713-9. https://doi.org/10.1063/1.481922210.1063/1.4819222 ↗
23. Perumal S, Roychowdhury S, Biswas K (2016) High performance thermoelectric materials and devices based on GeTe. J Mater Chem C 4(32):7520–7536. https://doi.org/10.1039/C6TC02501C10.1039/C6TC02501C ↗
24. Caldwell MA, Raoux S, Wang RY, Wong HSP, Milliron DJ (2010) Synthesis and size-dependent crystallization of colloidal germanium telluride nanoparticles. J Mater Chem 20(7):1285–1291. https://doi.org/10.1039/B917024C10.1039/B917024C ↗
25. Arachchige IU, Soriano R, Malliakas CD, Ivanov SA, Kanatzidis MG (2011) Amorphous and Crystalline GeTe Nanocrystals. Adv Funct Mater 21(14):2737–2743. https://doi.org/10.1002/adfm.20110063310.1002/adfm.201100633 ↗
26. Ovik R, Long BD, Barma MC, Riaz M, Sabri MFM, Said SM, Saidur R (2016) A review on nanostructures of high-temperature thermoelectric materials for waste heat recovery. Renew Sustain Energy Rev 64:635–659. https://doi.org/10.1016/j.rser.2016.06.03510.1016/j.rser.2016.06.035 ↗
27. Yang SH, Zhu TJ, Sun T, He J, Zhang SN, Zhao XB (2008) Nanostructures in high-performance (GeTe)x(AgSbTe2)100−x thermoelectric materials. Nanotechnology 19(24):245707-1–245707-5. https://doi.org/10.1088/0957-4484/19/24/24570710.1088/0957-4484/19/24/245707 ↗
28. Kim H-S, Dharmaiah P, Madavali B et al (2017) Large-scale production of (GeTe)x(AgSbTe2)100−x (x = 75, 80, 85, 90) with enhanced thermoelectric properties via gas-atomization and spark plasma sintering. Acta Mater 128:43–53. https://doi.org/10.1016/j.actamat.2017.01.05310.1016/j.actamat.2017.01.053 ↗
29. Schröder T, Rosenthal T, Giesbrecht N, Nentwig M (2014) Nanostructures in Te/Sb/Ge/Ag (TAGS) thermoelectric materials induced by phase transitions associated with vacancy ordering. Inorg Chem 53(14):7722–7729. https://doi.org/10.1021/ic501024310.1021/ic5010243 ↗
30. Guan W, Long S, Jia R, Liu M (2007) Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Appl Phys Lett 91(6):062111-1–062111-3. https://doi.org/10.1063/1.276015610.1063/1.2760156 ↗
31. Liu Q, Long S, Wang W et al (2010) Low-power and highly uniform switching in-based ReRAM with a Cu nanocrystal insertion layer. IEEE Electron Device Lett 31(11):1299–1301. https://doi.org/10.1109/LED.2010.207083210.1109/LED.2010.2070832 ↗
32. Chang WY, Cheng KJ, Tsai JM, Chen HJ, Chen F, Tsai MJ, Wu TB (2009) Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals. Appl Phys Lett 95(4):042104-1–042104-3. https://doi.org/10.1063/1.319365610.1063/1.3193656 ↗
33. Yang SH, Zhu TJ, Zhang SN, Shen JJ, Zhao XB (2010) Natural microstructure and thermoelectric performance of (GeTe)80(AgySb2−yTe3−y)20. J Electron Mater 39(9):2127–2131. https://doi.org/10.1007/s11664-009-0993-y10.1007/s11664-009-0993-y ↗
34. Chen Y, He B, Zhu TJ, Zhao XB (2012) Thermoelectric properties of non-stoichiometric AgSbTe2 based alloys with a small amount of GeTe addition. J Phys D Appl Phys 45(11):115302-1–115302-5. https://doi.org/10.1088/0022-3727/45/11/11530210.1088/0022-3727/45/11/115302 ↗
35. Kusz B, Miruszewski T, Bochentyn B, Łapiński M, Karczewski J (2016) Structure and thermoelectric properties of Te–Ag–Ge–Sb (TAGS) materials obtained by reduction of melted oxide substrates. J Electron Mater 45(2):1085–1093. https://doi.org/10.1007/s116610.1007/s11664-015-4251-1 ↗
36. Sadia Y, Ohaion-Raz T, Ben-Yehuda O, Korngold M, Gelbstein Y (2016) Criteria for extending the operation periods of thermoelectric converters based on IV–VI compounds. J Solid State Chem 241:79–85. https://doi.org/10.1016/j.jssc.2016.06.00610.1016/j.jssc.2016.06.006 ↗
37. Polking MJ, Urban JJ, Milliron DJ et al (2011) Size-dependent polar ordering in colloidal GeTe nanocrystals. Nano Lett 11(3):1147–1152. https://doi.org/10.1021/nl104075v10.1021/nl104075v ↗
38. Lee SH, Ko DK, Jung Y, Agarwal R (2006) Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires. Appl Phys Lett 89(22):223116-1–223116-3. https://doi.org/10.1063/1.239755810.1063/1.2397558 ↗
39. Sun X, Yu B, Ng G, Meyyappan M (2007) One-dimensional phase-change nanostructure: germanium telluride nanowire. J Phys Chem C 111(6):2421–2425. https://doi.org/10.1021/jp065880410.1021/jp0658804 ↗
40. Taneja P, Banerjee R, Ayyub P, Dey GK (2001) Observation of a hexagonal (4H) phase in nanocrystalline silver. Phys Rev B 64(3):033405-1–033405-4. https://doi.org/10.1103/PhysRevB.64.03340510.1103/PhysRevB.64.033405 ↗
41. Nakaoka T, Satoh H, Honjo S, Takeuchi H (2012) First-sharp diffraction peaks in amorphous GeTe and Ge2Sb2Te5 films prepared by vacuum-thermal deposition. AIP Adv 2(4):042189-1–042189-6. https://doi.org/10.1063/1.477332910.1063/1.4773329 ↗
42. Imanishi Y, Kida S, Nakaoka T (2016) Direct observation of Ag filament growth and unconventional SET-RESET operation in GeTe amorphous films. AIP Adv 6(7):075003-1–075003-8. https://doi.org/10.1063/1.495863310.1063/1.4958633 ↗
43. Karakaya I, Thompson WT (1991) The Ag–Te (silver–tellurium) system. J Phase Equilib 12:56–6310.1007/BF02663676 ↗
44. Ojha SN (2001) Metastable phase formation during solidification of undercooled melt. Mater Sci Eng A 304–306:114–118. https://doi.org/10.1016/S0921-5093(00)01466-010.1016/S0921-5093(00)01466-0 ↗
45. Pandey OP, Ojha SN, Lele S (1997) Thermodynamic analysis of Ag3Ge phase formation. J Mater Sci Technol 13(6):524–526
46. Zhang X, Chen Z, Lin S, Zhou B, Gao B, Pei Y (2017) Promising thermoelectric Ag5−δTe3 with intrinsic low lattice thermal conductivity. ACS Energy Lett 2(10):2470–2477. https://doi.org/10.1021/acsenergylett.7b0081310.1021/acsenergylett.7b00813 ↗
47. Fujikane M, Kurosaki K, Muta H, Yamanaka S (2005) Electrical properties of α- and β-Ag2Te. J Alloys Compd 387:297–299. https://doi.org/10.1016/j.jallcom.2004.06.05410.1016/j.jallcom.2004.06.054 ↗
48. Theye ML, Van VN, Fisson S (1983) Validity of the free-electron model for Ag–Ge and Au–Ge amorphous metallic alloys. Philos Mag B 47:31–50. https://doi.org/10.1080/0141863830822678210.1080/01418638308226782 ↗