journal article·2020-04

Investigation of lead surface segregation during germanium–lead epitaxial growth

Xiangquan Liu, Jun Zheng, Xiuli Li, Chaoqun Niu, Linzhi Peng, Fengshuo Wan, Zhi Liu, Yuhua Zuo, Chunlai Xue, Buwen Cheng

Journal of Materials Science· Volume 55· Issue 11
Publisher page

Abstract

Crystalline germanium–lead (GePb) alloys were deposited on Ge(100) substrates via magnetron sputtering epitaxy. Strip-shaped Pb segregation along the direction was observed on the Ge0.976Pb0.024 film surface, as revealed by scanning electron microscopy. The chemical compositions and structural properties of the strip-shaped segregation were investigated by energy-dispersive X-ray spectroscopy, cross-sectional transmission electron microscopy and micro-Raman scattering spectra. The Ge0.976Pb0.024 film remained high crystal quality even after Pb segregation. The strip-shaped segregation was mainly composed of polycrystalline Pb, and its surface was covered with a GePb nanocrystalline layer.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Surface and Thin Film Phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (15)

Show source-provided references
1. Zhou Q, Chan TK, Lim SL, Zhan C, Osipowicz T, Gong X, Tok ES, Yeo Y-C (2014) Single crystalline germanium–lead alloy on germanium substrate formed by pulsed laser epitaxy. ECS Solid State Lett 3:91–9310.1149/2.0141407ssl ↗
2. Zhou Q, Ong EBL, Lim SL, Vajandar S, Osipowicz T, Gong X, Tok ES, Yeo Y-C (2016) Single crystalline germanium–lead formed by laser-induced epitaxy. ECS J Solid State Sci Technol 5:353–36010.1149/2.0331606jss ↗
3. Schlipf J, Frieiro JL, Fischer IA, Serra C, Schulze J, Chiussi S (2017) Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy. In: 2017 40th international convention on information and communication technology, electronics and microelectronics (MIPRO), IEEE, Opatija, Croatia10.23919/MIPRO.2017.7973387 ↗
4. Alahmad H, Mosleh A, Alher M, Banihashemian SF, Ghetmiri SA, Al-Kabi S, Du W, Li B, Yu S-Q, Naseem HA (2018) GePb alloy growth using layer inversion method. J Electron Mater 47:3733–374010.1007/s11664-018-6233-6 ↗
5. Liu X, Zheng J, Zhou L, Liu Z, Zuo Y, Xue C, Cheng B (2019) Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy. J Alloy Compd 785:228–23110.1016/j.jallcom.2019.01.163 ↗
6. Huang W, Cheng B, Xue C, Li C (2014) Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration. Phys B 443:43–4810.1016/j.physb.2014.03.008 ↗
7. Huang W, Cheng B, Xue C, Yang H (2017) The band structure and optical gain of a new IV-group alloy GePb: a first-principles calculation. J Alloy Compd 701:816–82110.1016/j.jallcom.2017.01.195 ↗
8. Zheng J, Li L, Zhou T, Zuo Y, Li C, Cheng B, Wang Q (2014) Growth of crystalline Ge1−xSnx films on Si (100) by magnetron sputtering. ECS Solid State Lett 3:111–11310.1149/2.0081409ssl ↗
9. Liu X, Zheng J, Li X, Liu Z, Zuo Y, Xue C, Cheng B (2019) Study of GePb photodetectors for shortwave infrared detection. Opt Express 27:18038–1804310.1364/OE.27.018038 ↗
10. Li H, Cui YX, Wu KY, Tseng WK, Cheng HH, Chen H (2013) Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment. Appl Phys Lett 102:25190710.1063/1.4812490 ↗
11. Tsukamoto T, Hirose N, Kasamatsu A, Mimura T, Matsui T, Suda Y (2015) Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy. Appl Phys Lett 106:05210310.1063/1.4907863 ↗
12. Takase R, Ishimaru M, Uchida N, Maeda T, Sato K, Lieten RR, Locquet J-P (2016) Behavior of Sn atoms in GeSn thin films during thermal annealing: ex-situ and in situ observations. J Appl Phys 120:24530410.1063/1.4973121 ↗
13. Su S, Wang W, Cheng B, Hu W, Zhang G, Xue C, Zuo Y, Wang Q (2011) The contributions of composition and strain to the phonon shift in alloys. Solid State Commun 151:647–65010.1016/j.ssc.2011.01.017 ↗
14. Costa VRD, Tolle J, Roucka R, Poweleit CD, Kouvetakis J, Menéndez J (2007) Raman scattering in Ge1−ySny alloys. Solid State Commun 144:240–24410.1016/j.ssc.2007.08.020 ↗
15. Assali S, Nicolas J, Moutanabbir O (2019) Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. J Appl Phys 125:02530410.1063/1.5050273 ↗