Correlation of efficient luminescence with crystal structures of y-Er2Si2O7 and α-Er2Si2O7 in Er-doped silicon oxide films
Source abstract
Abstract
We have investigated the fabrication and luminescent properties of different polymorphs of erbium (Er) silicate in Er-doped silicon oxide films. Silicon oxide films embedded with y-Er2Si2O7 and α-Er2Si2O7 layers have been fabricated with annealing at 1100 °C and 1150 °C, respectively. We demonstrate that y-Er2Si2O7 shows a stronger photoluminescence (PL) intensity, a longer PL lifetime, and a weaker PL thermal quenching effect than α-Er2Si2O7 due to the larger density of optically active Er ions, larger Er–Er average distance, higher symmetry, and stronger Er-O bonding. The Er lifetime–density product of y-Er2Si2O7 is as high as 3.5 × 1018 s cm−3 and is at least 2.4 times as large as that of α-Er2Si2O7 making y-Er2Si2O7 an excellent candidate for high optical gain.
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Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices · Luminescence Properties of Advanced Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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