journal article·2018-08

A comparison of the thermal decomposition mechanism of wurtzite AlN and zinc blende AlN

Zhiqiang Zhou, Xiumin Chen, Ye Yuan, Lei Shi, Wenlong Jiang, Bin Yang, Baoqiang Xu, Dachun Liu

Journal of Materials Science· Volume 53· Issue 16
Publisher page

Abstract

The sublimation route is one of the primary and most significant methods for the synthesis of an aluminum nitride (AlN) single crystal. Its long synthesis time and high reaction temperature, however, limit the production of its commercial product. In this work, we applied HSC Chemistry 6 software, ab initio molecular dynamics, and X-ray diffraction to investigate the thermal decomposition of AlN. We calculated the decomposition temperatures of AlN under vacuum and simulated the decomposition mechanism of AlN by the ab initio molecular dynamics method. According to the thermodynamic calculations, the decomposition temperature of AlN decreased following a decrease in the system pressure. The ab initio molecular dynamics results indicated that wurtzite-type AlN (w-AlN) was decomposed by the layer-by-layer mechanism and followed a decomposition reaction equation of AlN → Al(g) + 0.29N2(g) + 0.42N(g), which originated from the inequality sp3 hybridization. The zinc-type AlN (z-AlN) decomposed from the surface to interior of the structure because of the equality of the sp3 hybridization, and the z-AlN decomposition reaction equation followed AlN → Al(g) + 0.5N2(g). The AlN decomposition experiments further verified that Al(g) was the product of the wurtzite-type AlN thermal decomposition. This work can provide valuable information for the preparation of the AlN single crystal.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (36)

Show source-provided references
1. Li Z, Yadav S, Chen Y et al. (2017) Mater Res Lett 1
2. Xi S, Liu X, Li P, Zhou J (2008) J Alloys Compd 457:452–45610.1016/j.jallcom.2007.02.151 ↗
3. Kumagai Y, Akiyama K, Togashi R et al (2007) J Cryst Growth 305:366–37110.1016/j.jcrysgro.2007.04.005 ↗
4. Forslund B, Zheng J (1993) Carbothermal synthesis of aluminium nitride at elevated nitrogen pressures. J Mater Sci 28:3132–3136. https://doi.org/10.1007/BF0035422610.1007/BF00354226 ↗
5. Liu C, Hu Z, Wu Q et al (2005) J Am Chem Soc 127:1318–132210.1021/ja045682v ↗
6. Makarov YN, Avdeev OV, Barash IS et al (2008) J Cryst Growth 310:881–88610.1016/j.jcrysgro.2007.11.059 ↗
7. Shi Y, Liu B, Liu L et al (2014) MRS Internet J Nitride Semicond Res 6:510.1557/S109257830000017X ↗
8. Reinhardt B, Daw J, Tittmann B (2017) IEEE Trans Nucl Sci 65:533–53810.1109/TNS.2017.2775163 ↗
9. Lan Y, Shi Y (2017) Mater Lett 213:1–310.1016/j.matlet.2017.11.005 ↗
10. Lan Y, Shi Y, Qi K, Ren Z, Liu H (2018) Ceram Int 44:8257–826210.1016/j.ceramint.2018.02.007 ↗
11. Yan GN, Deng XY, Lin JD (2017) Print Circuit Inf 25(10):32–37
12. Xiong B, Sun C, Li H et al (2017) Optica 4:893–89610.1364/OPTICA.4.000893 ↗
13. Jung H, Tang HX (2016) Nanophotonics 5:263–27110.1515/nanoph-2016-0020 ↗
14. Liu G, Zhou G, Qin Z et al (2017) CrystEngComm 19:5522–552710.1039/C7CE01239J ↗
15. Xie J, Moody B, Mita S (2017) US Patent 9,680,062
16. Jiao ZY, Ma SH, Yang JF (2011) Solid State Sci 13:331 33610.1016/j.solidstatesciences.2010.11.030 ↗
17. Saib S, Bouarissa N (2006) J Phys Chem Solids 67:1888–189210.1016/j.jpcs.2006.05.007 ↗
18. Segal AS, Karpov SY, Makarov YN et al (2000) J Cryst Growth 211:68–7210.1016/S0022-0248(99)00844-1 ↗
19. Dryburgh PM (1992) J Cryst Growth 125:65–6810.1016/0022-0248(92)90321-9 ↗
20. L’vov BV, Ugolkov VL (2005) Thermochim Acta 438:1–810.1016/j.tca.2005.07.007 ↗
21. Hildenbrand DL, Hall WF (1963) J Phys Chem 67(67):1084
22. Averyanova MV, Przhevalskii IN, Karpov SY, Makarov YN, Ramm MS, Talalaev RA (1997) Mater Sci Eng B 43:167–17110.1016/S0921-5107(96)01856-9 ↗
23. Deng J, Wen S, Chen X, Xian Y, Wu D (2014) Metall Mater Trans A 45:2445–245210.1007/s11661-014-2206-4 ↗
24. Deng J, Lei Y, Wen S, Chen Z (2015) Int J Miner Process 140:43–49. https://doi.org/10.1016/j.minpro.2015.04.02610.1016/j.minpro.2015.04.026 ↗
25. Timoshkin AY, Bettinger HF, Schaefer HF (1997) J Am Chem Soc 119:5668–567810.1021/ja964163s ↗
26. Paszkowicz W, Podsiadło S, Minikayev R (2004) J Alloys Compd 382:100–10610.1016/j.jallcom.2004.05.036 ↗
27. Yeh C, Lu ZW, Froyen S, Zunger A (1992) Phys Rev B Condens Matter 46:1008610.1103/PhysRevB.46.10086 ↗
28. Chen X-M, Yang B, Tao D-P, Dai Y-N (2009) Metall Mater Trans B 41:137. https://doi.org/10.1007/s11663-009-9321-410.1007/s11663-009-9321-4 ↗
29. Lu Y, Zhou Y-z, Chen X-m et al (2016) J Cent South Univ 23:286. https://doi.org/10.1007/s11771-016-3072-610.1007/s11771-016-3072-6 ↗
30. Nawi NM, Ransing MR, Ransing RS (2006) R S I S D A 152–157
31. Nosé S (1984) J Chem Phys 81:51110.1063/1.447334 ↗
32. Andersen HC (1980) J Chem Phys 72:2384–239310.1063/1.439486 ↗
33. Dewan MA, Rhamdhani MA, Brooks GA, Monaghan BJ, Prentice L (2013) Miner Process Extr Metall Imm Trans 122:113–12110.1179/1743285513Y.0000000039 ↗
34. Lawniczak-Jablonska K, Suski T, Gorczyca I et al (2000) Phys Rev B 61:1662310.1103/PhysRevB.61.16623 ↗
35. Jonnard P, Capron N, Semond F, Massies J, Martinez-Guerrero E, Mariette H (2003) Eur Phys J B EPJC 42:35110.1140/epjb/e2004-00390-7 ↗
36. Dreger LH, Dadape VV, Margrave JL (1962) J Phys Chem 66:1556–155910.1021/j100814a515 ↗