Epitaxial growth and magnetic properties of h-LuFeO3 thin films
Source abstract
Abstract
In this paper, the epitaxial hexagonal LuFeO3 (h-LuFeO3) thin films with c-axis-oriented single phase, smooth surface were grown on YSZ (111) substrates by pulsed laser deposition method. Furthermore, a structural distortion of increased lattice constant of c is found in the epitaxial h-LuFeO3 thin films. Moreover, the epitaxial h-LuFeO3 thin films show room-temperature ferromagnetism. The coercive field and remnant magnetization of the epitaxial h-LuFeO3 thin film decrease with the increase in the test temperature from 50 to 300 K. The study would be of benefit to the room-temperature single-phase multiferroic materials.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Multiferroics and related materials · Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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