Elastic field due to dislocation loops in isotropic multilayer system
Source abstract
Abstract
A semi-analytical solution based on fast discrete Fourier transform is developed to analyze the elastic fields induced by dislocation loops within perfect bonding multilayers. Final elastic field is the linear superposition of bulk elastic field and correction elastic field, and the correction elastic field is induced by elastic modulus mismatch and lattice plane misorientation across interface planes. Final displacement and traction stress are continuous across the interface planes of multilayer system, and the case of perfect bonding two-layer system is elaborated in detail. Validity of the semi-analytical approach is tested by analyzing elastic fields due to dislocation loop within perfect bonding two-layer system. Interface elastic field profiles of perfect bonding two-layer Cu–Nb system are studied, demonstrating that final elastic field is the linear superposition of bulk stress and correction stress fields. Simulation results demonstrate that loop depth within thin film and modulus mismatch have a remarkable effect on the elastic field distribution.
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Research context
OpenAlex topics: Microstructure and mechanical properties · Numerical methods in engineering · Electronic Packaging and Soldering Technologies
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