Electrical conduction and breakdown properties of silicon nitride films
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OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · GaN-based semiconductor devices and materials
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References (36)
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1. A. Lodding andL. Lundkoist,Thin Solid Films 25 (1975) 491.10.1016/0040-6090(75)90067-X ↗
2. B. J. Sealy andJ. M. Ritchie,ibid. 35 (1976) 127.10.1016/0040-6090(76)90246-7 ↗
3. A. F. McLean,Bull. Amer. Ceram. Soc. 52 (1973) 464, 482.
4. S. M. Hu andL. V. Gregor,J. Electrochem. Soc. 114 (1967) 826.10.1149/1.2426749 ↗
5. A. W. Stephens, J. L. Vossen andW. Kern,ibid. 123 (1976) 303.10.1149/1.2132809 ↗
6. G. J. Kominiak,ibid. 122 (1975) 1271.10.1149/1.2134441 ↗
7. W. Posadowski,Thin Solid Films 69 (1980) 149.10.1016/0040-6090(80)90030-9 ↗
8. S. M. Hu,J. Electrochem. Soc. 113 (1966) 693.10.1149/1.2424093 ↗
9. T. L. Chu, J. R. Szedon andC. H. Lee,Sol. Stat. Electron. 10 (1967) 897.10.1016/0038-1101(67)90003-2 ↗
10. S. Yamazaki, K. Wada andT. Taniguchi,Japan J. Appl. Phys. 9 (1970) 1467.10.1143/JJAP.9.1467 ↗
11. M. J. Rand andJ. F. Roberts,J. Electrochem. Soc. 120 (1973) 443.
12. P. D. Davidse andL. I. Maissel,J. Appl. Phys. 37 (1966) 574.10.1063/1.1708218 ↗
13. Y. Kawano,Japan J. Appl. Phys. 8 (1969) 876.10.1143/JJAP.8.876 ↗
14. G. Turban andY. Catherin,Thin Solid Films 35 (1976) 179.10.1016/0040-6090(76)90255-8 ↗
15. F. Olcaytug, K. Riedling andW. Fallmann,ibid. 67 (1980) 321.10.1016/0040-6090(80)90465-4 ↗
16. J. Chin andN. B. Elsner,J. Vac. Sci. Technol. 12 (1975) 821.10.1116/1.568680 ↗
17. M. Fukutomi, H. Kitajma, M. Okada andR. Watanabe,J. Electrochem. Soc. 124 (1977) 1420.10.1149/1.2133666 ↗
18. Y. Murayama andT. Takao,Thin Solid Films 40 (1977) 309.10.1016/0040-6090(77)90132-8 ↗
19. E. J. M. Kendall,Phys. Stat. Sol. 32 (1969) 763.10.1002/pssb.19690320229 ↗
20. S. M. Sze,J. Appl. Phys. 38 (1967) 2951.10.1063/1.1710030 ↗
21. B. Swaroop andP. S. Schaffer,J. Phys. D 3 (1970) 803.10.1088/0022-3727/3/5/423 ↗
22. J. R. Yeargan andH. L. Taylor,J. Appl. Phys. 39 (1968) 5600.10.1063/1.1656022 ↗
23. E. A. Taft,J. Electrochem. Soc. 118 (1971) 1341.10.1149/1.2408318 ↗
24. F. M. Nazar,Japan J. Appl. Phys. 17 (1978) 1953.10.1143/JJAP.17.1953 ↗
25. T. L. Chu, C. H. Lee andG. A. Gruber,J. Electrochem. Soc. 114 (1967) 717.10.1149/1.2426715 ↗
26. S. Yoshioka andS. Takayanagi,ibid. 114 (1967) 962.10.1149/1.2426791 ↗
27. R. Gereth andW. Scherber,ibid. 119 (1972) 1248.10.1149/1.2404452 ↗
28. C. E. Morosanu,Thin Solid Films 65 (1980) 171.10.1016/0040-6090(80)90254-0 ↗
29. A. K. Jonscher andN. H. Nathoo,ibid. 12 (1972) S15.10.1016/0040-6090(72)90416-6 ↗
30. M. S. Frost andA. K. Jonscher,ibid. 29 (1975) 7.10.1016/0040-6090(75)90211-4 ↗
31. E. J. Lesueur andA. K. Jonscher,ibid. 12 (1972) S9.10.1016/0040-6090(72)90415-4 ↗
32. A. K. Jonscher,ibid. 1 (1967) 213.10.1016/0040-6090(67)90004-1 ↗
33. W. S. Chan andC. K. Loh,ibid. 6 (1970) 91.10.1016/0040-6090(70)90066-0 ↗
34. F. Forlani andN. Minnaja,Phys. Stat. Sol. 4 (1964) 311.10.1002/pssb.19640040210 ↗
35. W. Rothemund andC. R. Fritzsche,Thin Solid Films 15 (1973) 199.10.1016/0040-6090(73)90043-6 ↗
36. A. K. Sinha andT. E. Smith,J. Appl. Phys. 49 (1978) 2756.10.1063/1.325200 ↗