journal article·2008-09

Compositional effect on optical characteristics of solution grown (Cd1−xSnx)S thin films

R. Das, Rajesh Kumar

Journal of Materials Science· Volume 43· Issue 17
Publisher page

Abstract

A good deal of information regarding the synthesis and optical properties of chemically grown (Cd1−xSnx)S (x = 0.01–0.40) thin film has been reported. The growth of these films depends on various preparative parameters and deposition conditions. The reactant concentration, pH, deposition temperature, and rate of agitation were found to influence significantly the quality and thickness of the films. The photoconductive studies have been done with the help of rise and decay curves. Lifetime, mobility, and trap depth are calculated for observed parameters. Band gap measurements for the prepared films have been done with the help of optical transmission spectra using UV-VIS-IR spectrophotometer (190–1100 A). Interesting results of PC rise and decay studies, optical absorption, and transmission spectra have been presented and discussed. Mobility is influenced significantly by Sn composition. The action spectra showed displacement in the absorption edge towards lower energy side by the addition of Sn mole content. The energy gap decreased from 2.1 to 1.9 eV for x = 0.01 and 1.85 eV for x = 0.02.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (14)

Show source-provided references
1. Roy P, Srivastava SK (2006) J Phys D Appl Phys 39:4771. doi: https://doi.org/10.1088/0022-3727/39/22/00610.1088/0022-3727/39/22/006 ↗
2. George PJ, Juarez AS, Nair PK (1996) Semicond Sci Technol 111:1090. doi: https://doi.org/10.1088/0268-1242/11/7/02110.1088/0268-1242/11/7/021 ↗
3. Sim LY, Kazmereski LL, Clak AH, Ireland PJ, Mortom DW (1978) J Vac Sci Technol 15:265. doi: https://doi.org/10.1116/1.56956710.1116/1.569567 ↗
4. Chandra T, Bhushan S (2004) J Mater Sci (Springer) 39:630310.1023/B:JMSC.0000043600.30625.d1 ↗
5. Deshmukh LP, More BM, Holikatti SG, Hankare P (1994) Bull Mater Sci 17:455. doi: https://doi.org/10.1007/BF0275788910.1007/BF02757889 ↗
6. Jodgudri SA, Mohite UK, Godave KM, Lokhande CD (1994) Ind J Pure Appl Phys 32:772
7. Sharma TP, Patidar D, Saxena NS, Sharma K (2006) Ind J Pure Appl Phys 44:125
8. Bhosale CH, Uplane MD, Patil PS, Lokhande CD (1994) Ind J Pure Appl Phys 32:269
9. Ubale AU, Sangwar VS, Kulkarni DK (2007) Bull Mater Sci 30:14710.1007/s12034-007-0026-5 ↗
10. Bhushan S, Mukherjee M, Bose P (2001) Radiat Eff Defects 153:36710.1080/10420150108211852 ↗
11. Chopra KL (1969) Thin film phenomena. McGraw-Hill, New York, p 14
12. Narayanan KL, Vijay Kumar KP, Nair KGM, Rao GVN (1997) Bull Mater Sci 20:28710.1007/BF02745094 ↗
13. Soliman LI, Afify HH, Battisha IK (2004) Ind J Pure Appl Phys 42:12
14. Sze SM (1981) Physics of semiconductor devices, vol 16. Wiley, New York, p 849