Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots
Source abstract
Abstract
The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. In particular, we have studied the misfit dislocations that appear because of the high-lattice mismatch in the heterostructure. Our results have shown the formation of Lomer dislocations not only at the interface between the GaSb QDs and the GaAs substrate, but also at the interface with the GaAs capping layer, which is not a frequent observation. The analysis of these dislocations points to the existence of chains of dislocation loops around the QDs. The dislocation core of the observed defects has been characterized, showing that they are reconstructed Lomer dislocations, which have less distortion at the dislocation core in comparison to unreconstructed ones. Strain measurements using geometric phase analysis show that these dislocations may not fully relax the strain due to the lattice mismatch in the GaSb QDs.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
Show source-provided references
1. Munnelly P, Heindel T, Karow MM, Höfling S, Kamp M, Schneider C, Reitzenstein S (2015) A pulsed nonclassical light source driven by an integrated electrically triggered quantum dot microlaser. IEEE J Sel Top Quantum Electron 21(6):1900609. doi: 10.1109/JSTQE.2015.241821910.1109/JSTQE.2015.2418219 ↗
2. Downs C, Vandervelde TE (2013) Progress in infrared photodetectors since 2000. Sensors 13(4):5054–5098. doi: 10.3390/s130405054 (Switzerland)10.3390/s130405054 ↗
3. Carrington PJ, Mahajumi AS, Wagener MC, Botha JR, Zhuang Q, Krier A (2012) Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells. Physics B 407(10):1493–1496. doi: 10.1016/j.physb.2011.09.06910.1016/j.physb.2011.09.069 ↗
4. Laghumavarapu RB, Moscho A, Khoshakhlagh A, El-Emawy M, Lester LF, Huffaker DL (2007) GaSbGaAs type II quantum dot solar cells for enhanced infrared spectral response. Appl Phys Lett 90(17):173125. doi: 10.1063/1.273449210.1063/1.2734492 ↗
5. Smakman EP, Garleff JK, Young RJ, Hayne M, Rambabu P, Koenraad PM (2012) GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. Appl Phys Lett 100(14):142116. doi: 10.1063/1.370161410.1063/1.3701614 ↗
6. Schaller RD, Klimov VI (2004) High efficiency carrier multiplication in PbSe nanocrystals: implications for solar energy conversion. Phys Rev Lett 92(18):186601–186603. doi: 10.1103/PhysRevLett.92.18660110.1103/PhysRevLett.92.186601 ↗
7. Lopatin S, Duscher G, Pennycook SJ, Chisholm MF (2002) Z-contrast imaging and EELS of dislocation cores at the Si/GaAs interface. Appl Phys Lett 81(15):2728–2730. doi: 10.1063/1.151180810.1063/1.1511808 ↗
8. Haugan HJ, Brown GJ, Elhamri S, Grazulis L (2015) Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection. J Cryst Growth 425:25–28. doi: 10.1016/j.jcrysgro.2015.03.00810.1016/j.jcrysgro.2015.03.008 ↗
9. Wang W, Gan X, Xu Y, Wang T, Wu H, Liu C (2015) High-quality n-type aluminum gallium nitride thin films grown by interrupted deposition and in situ thermal annealing. Mater Sci Semicond Process 30:612–617. doi: 10.1016/j.mssp.2014.11.01010.1016/j.mssp.2014.11.010 ↗
10. Balakrishnan G, Tatebayashi J, Khoshakhlagh A, Huang SH, Jallipalli A, Dawson LR, Huffaker DL (2006) III/V ratio based selectivity between strained Stranski–Krastanov and strain-free GaSb quantum dots on GaAs. Appl Phys Lett 89(16):161104. doi: 10.1063/1.236299910.1063/1.2362999 ↗
11. Hÿtch MJ, Snoeck E, Kilaas R (1998) Quantitative measurement of displacement and strain fields from HREM micrographs. Ultramicroscopy 74(3):131–146. doi: 10.1016/S0304-3991(98)00035-710.1016/S0304-3991(98)00035-7 ↗
12. Molina SI, Sales DL, Galindo PL, Fuster D, González Y, Alén B, González L, Varela M, Pennycook SJ (2008) Column-by-column compositional mapping by Z-contrast imaging. Ultramicroscopy 109:172–176. doi: 10.1016/j.ultramic.2008.10.00810.1016/j.ultramic.2008.10.008 ↗
13. Rudinsky ME, Karpov SY, Lipsanen H, Romanov AE (2015) Critical thickness and bow of pseudomorphic InxGa1-xAs-based laser heterostructures grown on (001)GaAs and (001)InP substrates. Mater Phys Mech 24(3):278–283. doi: 10.1134/S1063782613090054
14. Bickel JE, Millunchick JM (2014) The impact of the initial surface reconstruction on heteroepitaxial film growth and defect formation. Phys Scr 89(7):075707–075708. doi: 10.1088/0031-8949/89/7/07570710.1088/0031-8949/89/7/075707 ↗
15. Kim TW, Lee DU, Lee HS, Lee JY, Park HL (2001) Strain effects and atomic arrangements of 60° and 90° dislocations near the ZnTe/GaAs heterointerface. Appl Phys Lett 78(10):1409–1411. doi: 10.1063/1.134986610.1063/1.1349866 ↗
16. Noh YK, Hwang YJ, Kim MD, Kwon YJ, Oh JE, Kim YH, Lee JY (2007) Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates. J Korean Phys Soc 50(6):1929–1932. doi: 10.3938/jkps.50.192910.3938/jkps.50.1929 ↗
17. Kim YH, Lee JY, Noh YG, Kim MD, Oh JE (2007) High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate. Appl Phys Lett 90(24):241915. doi: 10.1063/1.274767410.1063/1.2747674 ↗
18. Fazouan N, Atmani E, El Kasri F, Rouhani MD, Esteve A (2011) Interface structure of deposited GaSb on GaAs (001): monte Carlo simulation and experimental study. J Mater Sci 47(4):1684–1689. doi: 10.1007/s10853-011-6018-210.1007/s10853-011-6018-2 ↗
19. Mahalingam K, Haugan HJ, Brown GJ, Eyink KG (2013) Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM. Ultramicroscopy 127:70–75. doi: 10.1016/j.ultramic.2012.09.00510.1016/j.ultramic.2012.09.005 ↗
20. Wang Y, Ruterana P, Chen J, Kret S, El Kazzi S, Genevois C, Desplanque L, Wallart X (2013) Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface. ACS Appl Mater Interfaces 5(19):9760–9764. doi: 10.1021/am402890710.1021/am4028907 ↗
21. Huang SH, Balakrishnan G, Khoshakhlagh A, Jallipalli A, Dawson LR, Huffaker DL (2006) Strain relief by periodic misfit arrays for low defect density GaSb on GaAs. Appl Phys Lett 88(13):131911–131913. doi: 10.1063/1.217274210.1063/1.2172742 ↗
22. Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL (2007) Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials. J Cryst Growth 303(2):449–455. doi: 10.1016/j.jcrysgro.2006.12.03210.1016/j.jcrysgro.2006.12.032 ↗
23. Silveira JP, Briones F (1999) In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compounds. J Cryst Growth 201–202:113–117. doi: 10.1016/S0022-0248(98)01301-310.1016/S0022-0248(98)01301-3 ↗
24. Suzuki K, Hogg RA, Arakawa Y (1999) Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy. J Appl Phys 85(12):8349–8352. doi: 10.1063/1.37062210.1063/1.370622 ↗
25. Matthews JW, Blakeslee AE (1974) Defects in epitaxial multilayers: i. misfit dislocations. J Cryst Growth 27:118–125. doi: 10.1016/S0022-0248(74)80055-2
26. Fu K, Fu Y (2009) Strain-induced Stranski–Krastanov three-dimensional growth mode of GaSb quantum dot on GaAs substrate. Appl Phys Lett 94(18):181913. doi: 10.1063/1.313205410.1063/1.3132054 ↗
27. He XQ, Wen C, Duan XF, Chen H (2011) Identification of atomic steps at AlSb/GaAs hetero-epitaxial interface using geometric phase method by high-resolution electron microscopy. Mater Lett 65(3):456–459. doi: 10.1016/j.matlet.2010.10.05410.1016/j.matlet.2010.10.054 ↗
28. Hÿtch MJ, Putaux JL, Pénisson JM (2003) Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy. Nature 423(6937):270–273. doi: 10.1038/nature0163810.1038/nature01638 ↗
29. Vajargah SH, Couillard M, Cui K, Tavakoli SG, Robinson B, Kleiman RN, Preston JS, Botton GA (2011) Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy. Appl Phys Lett 98(8):082113. doi: 10.1063/1.355162610.1063/1.3551626 ↗
30. Zhou W, Tang W, Lau KM (2011) A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition. Appl Phys Lett 99(22):221917. doi: 10.1063/1.366357110.1063/1.3663571 ↗
31. Hernández-Saz J, Herrera M, Molina SI, Stanley CR, Duguay S (2015) 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs. Scr Mater 103:73–76. doi: 10.1016/j.scriptamat.2015.03.01310.1016/j.scriptamat.2015.03.013 ↗
32. Li L, Liu G-j, Wang Y, Li M (2005) GaSb film growth on GaAs substrate by MBE. In: Source of the document proceedings of SPIE—The international society for optical engineering. 602038. doi: 10.1117/12.63514610.1117/12.635146 ↗
33. Huang S, Balakrishnan G, Huffaker DL (2009) Interfacial misfit array formation for GaSb growth on GaAs. J Appl Phys 105(10):103104–103105. doi: 10.1063/1.312956210.1063/1.3129562 ↗
34. Mallard RE, Wilshaw PR, Mason NJ, Walker PJ, Booker GR (1989) Lattice-relaxation of strained GaSb GaAs epitaxial layers grown by MOCVD. In: Institute of physics conference series, pp 331–336. http://ora.ox.ac.uk/objects/uuid:a73bbcb1-5119-4fbf-93c8-6ca6ecf1e733
35. Kim JH, Seong TY, Mason NJ, Walker PJ (1998) Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy. J Electron Mater 27(5):466–471. doi: 10.1007/s11664-998-0178-010.1007/s11664-998-0178-0 ↗
36. Matthews JW, Blakeslee AE (1974) Defects in epitaxial multilayers: I. misfit dislocations. J Cryst Growth 27(C):118–125. doi: 10.1016/S0022-0248(74)80055-2
37. Patel RK, Sanchez A, Ashwin MJ, Jones TS, Beanland R (2012) Relaxation mechanisms of InSb/GaSb quantum dots. In: 15th European Microscopy Congress: 0907. http://www.emc2012.org.uk//documents/Abstracts/Abstracts/EMC2012_0907.pdf
38. Lozano JG, Sánchez AM, García R, González D, Herrera M, Browning ND, Ruffenach S, Briot O (2007) Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots. Appl Phys Lett 91(7):071915. doi: 10.1063/1.277077610.1063/1.2770776 ↗