Plasma exposure inducing crystallization of indium oxide film with improved electrical and mechanical properties at room temperature
Source abstract
Abstract
A novel plasma exposure technique has been introduced into conventional magnetron sputtering process to enhance the crystallization of indium oxide (In2O3) films at room temperature. The effect of plasma exposure technique with different pulsed DC voltages on the electrical and mechanical properties of In2O3 films was investigated. It is observed that film crystallization can be significantly enhanced when the pulsed DC voltage (|V p|) is higher than |−500 V| (|V p| > |−500 V|). By applying the plasma exposure process, In2O3 films prepared at room temperature with thickness of 135 nm shows low resistivity of 4.11 × 10−4 Ω cm, mobility of 42.1 cm2/Vs, and transmittance over 80 % in the visible range. Compared with the In2O3 films without plasma exposure process, the In2O3 films with plasma exposure show better crystallization and remarkably higher nanohardness. The plasma exposure technique is a useful candidate technique for enhancing film crystallization at low temperature.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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