Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography
Source abstract
Abstract
Positron annihilation and atom probe tomography were used to study vacancy-type defects and their interaction with oxygen in 100 nm thick Ni x Al 1– x deposited on a SiO 2 /Si substrate. For as-deposited Ni 0.50 Al 0.50, (i) monovacancy (V) and divacancy-type defects and (ii) vacancy clusters were found to coexist, and the clusters were estimated to be larger than V 10 . Although no large change in the size of these vacancies was observed after postdeposition annealing below 500 °C, the concentration of vacancy clusters decreased as temperature increased. Upon annealing, oxygen diffused mainly through the grain boundaries. The oxygen incorporation was enhanced in Ni x Al 1– x with high Ni contents. The consumption of Al by surface oxides under Ni-rich conditions introduced defect-rich regions, and as a result, oxygen incorporation was enhanced likely via vacancy-assisted diffusion. The incorporated oxygen tended to couple with vacancies and form vacancy–oxygen complexes that were stable at 800 °C annealing.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Muon and positron interactions and applications · Semiconductor materials and devices · Ammonia Synthesis and Nitrogen Reduction
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Imec, Kapeldreef 75, 3001 Leuven, Belgium
Quantum Solid-State Physics Group, KU Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium
National Institute for Materials Science, Tsukuba 305-0047, Japan
Research Institute for Measurement and Analytical Instrumentation (RIMA), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
Research Center for Computational Design of Advanced Functional Materials (CD-FMat), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
Funding
Ministry of Education, Culture, Sports, Science and Technology · Japan Science and Technology Corporation · Tsukuba Materials Research
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