Amino Acid-Modified Wrinkled Graphene Oxide Nanofiber Embedded in PMMA for Long-Term Archival Memory Applications

With the growth of modern data-driven technology, the demand for long-term and stable memory devices has become the primary focus. Over the decades, organic material-based resistive memory devices have shown promising nonvolatile memory performance. In this connection, low-cost graphene materials have found many advances. Graphene oxide-based materials with a chemically adjustable structure, low mass density, good specific surface area, electrical conductivity, and thermoresistance are promising candidates for such memory devices. Graphene-based nanofiber materials are reported to outperform their nanotube counterparts in long-term storage device applications. In this study, we report for the first time a highly stable resistive memory device of graphene in the oxidized form as an amino acid-modified graphene oxide (AAM-GO) wrinkled nanostructure with fiber morphology embedded in poly(methyl methacrylate) (PMMA) as the active layer. The current–voltage characteristics of the device exhibit a write-once-read-many (WORM) times memory behavior, with a cyclic endurance of >10 4 cycles and data retention of >10 7 s. The high ON-OFF ratio of >10 3 remained consistent during the entire testing duration. A suitable mechanism is suggested for such high stability of the device.