Dynamics and characters of dislocations in ZnSe
Source abstract
Abstract
The mechanical strength of single-crystal ZnSe is investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnSe in the temperature range 150-300°C is around 7-13 MPa, easily deformed even at low temperature. From the temperature dependence of the yield stress an activation energy for dislocation motion in the ZnSe is deduced to be 0.5-0.7 eV. The stacking fault energy is estimated to be 7-9 mJ/m 2 from the dissociation width of dislocations into partials.
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OpenAlex topics: Advanced Semiconductor Detectors and Materials · Ion-surface interactions and analysis · Semiconductor Quantum Structures and Devices
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