Sputtering Codeposition and Metal-Induced Crystallization to Enhance the Power Factor of Nanocrystalline Silicon

High Resolution Image Download MS PowerPoint Slide The power factor of highly boron-doped nanocrystalline Si thin films with controlled doping concentration is investigated. We achieve a high degree of tuning of boron content with a charge carrier concentration from 10 18 to 10 21 /cm 3 and with the electrical conductivity by varying the boron magnetron power from 10 to 60 W while maintaining the power of a SiB source constant during codeposition from two independent sputtering sources. Along with the increase in the electrical conductivity with increased boron doping, we observe a steady decrease in the Seebeck coefficient from 500 to 100 μV/K. These values result in power factors that exhibit a marked maximum of 5 mW/K 2 m for a carrier concentration of around 10 21 / cm 3 at room temperature. Temperature-dependent measurements up to 650 °C show, with increasing doping concentration, a change of the resistivity from a semiconducting to a metallic behavior and an increase of both Seebeck coefficient and power factor, with this last one peaking at 9.8 mW/K 2 m in the 350–550 °C temperature range. For higher concentrations, scanning electron microscopy and energy-dispersive X-ray spectroscopy show a partial segregation of boron on particles on the surface. These results exemplify the great advantage of sputtering codeposition methods to easily tune and optimize the thermoelectric performance in thin films, obtaining in our specific case highly competitive power factors in a simple and reliable manner.