Scanning probe-based nanolithography: nondestructive structures fabricated on silicon surface via distinctive anisotropic etching in HF/HNO3 mixtures
Source abstract
Abstract
HF/HNO3 mixtures were typical isotropic etching systems for processing silicon (Si) surface, and still suffer from difficulties in controllably fabricating nanostructures. Here, fast and anisotropic etching approach with HF/HNO3 mixtures was developed to overcome this challenge. An atomic force microscope diamond tip was used for the preparation of friction-induced hillocks, mainly consisting of amorphous Si, through reciprocating sliding of Si surfaces below critical contact pressure. The hillock acted as a mask against HF/HNO3 mixtures etching, forming nanostructures through subsequent distinctive anisotropic etching. The effects of volume ratio of HF/HNO3 mixtures, sliding cycle, normal load, and etching time on anisotropic etching were systematically investigated to optimize fabrication parameters. Further analysis suggested that lower average dangling bond density in scanned regions may retard the breakup of Si–H bonds and polarized Si–Si backbonds, leading to lower dissolution rates compared to original Si surface. Cross-sectional high-resolution transmission electron microscope observations revealed defect-free nanostructures fabricated by the anisotropic etching. Also, several nondestructive nanostructures with different patterns were realized on Si surfaces by programming tip scanning traces. In sum, the proposed method is promising for the fabrication of controllable nano-sized functional devices by HF/HNO3 mixtures. Nanofabrication of nondestructive structures on silicon surface via distinctive anisotropic etching in HF/HNO3 mixtures
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Force Microscopy Techniques and Applications · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
Show source-provided references
1. Li YM, Somorjai GA (2010) Nanoscale advances in catalysis and energy applications. Nano Lett 10:2289–229510.1021/nl101807g ↗
2. Tripp RA, Dluhy RA, Zhao YP (2008) Novel nanostructures for SERS biosensing. Nano Today 3:31–3710.1016/S1748-0132(08)70042-2 ↗
3. Hong AJ, Liu CC, Wang Y, Kim J, Xiu FX, Ji SX, Zou J, Nealey PF, Wang KL (2010) Metal nanodot memory by self-assembled block copolymer lift-off. Nano Lett 10:224–22910.1021/nl903340a ↗
4. Priolo F, Gregorkiewicz T, Galli M, Krauss TF (2014) Silicon nanostructures for photonics and photovoltaics. Nat nanotechnol 9:19–3210.1038/nnano.2013.271 ↗
5. Achal R, Rashidi M, Croshaw J, Churchill D, Taucer M, Huff T, Cloutier M, Pitters J, Wolkow RA (2018) Lithography for robust and editable atomic-scale silicon devices and memories. Nat Commun 9:277810.1038/s41467-018-05171-y ↗
6. Nayak BK, Iyengar VV, Gupta MC (2011) Efficient light trapping in silicon solar cells by ultrafast-laser-induced self-assembled micro/nano structures. Prog Photovoltaics 19:631–63910.1002/pip.1067 ↗
7. Duan XF, Zhou GR, Huang YQ, Shang YF, Ren XM (2015) Theoretical analysis and design guideline for focusing subwavelength gratings. Opt express 23:2639–264610.1364/OE.23.002639 ↗
8. Tang QT, Shen HL, Yao HY, Gao K, Ge JW, Liu YW (2020) Investigation of optical and mechanical performance of inverted pyramid based ultrathin flexible c-Si solar cell for potential application on curved surface. Appl Surf Sci 504:14458810.1016/j.apsusc.2019.144588 ↗
9. Liu JL, Zhang JL, Mao QH, Wu XM, Jiang FY (2013) Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate. CrystEngComm 15:3372–337610.1039/c3ce27059a ↗
10. Regonda S, Tian RH, Gao JM, Greene S, Ding JH, Hu W (2013) Silicon multi-nanochannel FETs to improve device uniformity/stability and femtomolar detection of insulin in serum. Biosens Bioelectron 45:245–25110.1016/j.bios.2013.01.027 ↗
11. Wu YQ, Huang H, Zou J, Dell JM (2009) Nanoscratch-induced deformation of single crystal silicon. J Vac Sci Technol B 27:1374–137710.1116/1.3049517 ↗
12. Wu L, Yu BJ, Fan ZT, Zhang P, Feng CQ, Chen P, Ji JX, Qian LM (2020) Effects of normal load and etching time on current evolution of scratched GaAs surface during selective etching. Mater Sci Semicon Proc 105:10474410.1016/j.mssp.2019.104744 ↗
13. Guo GR, Li JM, Deng CB, He QP, Yu QY, Zhou C, Liu XX, Jiang SL, Chen L, Yu BJ, Qian LM (2018) Nondestructive nanofabrication on monocrystalline silicon via site-controlled formation and removal of oxide mask. Appl Phys Express 11:11650110.7567/APEX.11.116501 ↗
14. Guo J, Yu BJ, Chen L, Qian LM (2015) Nondestructive nanofabrication on Si (100) surface by tribochemistry-induced selective etching. Sci Rep 5:1647210.1038/srep16472 ↗
15. Chou SY, Keimel C, Gu J (2002) Ultrafast and direct imprint of nanostructures in silicon. Nature 417:835–83710.1038/nature00792 ↗
16. Sievilä P, Chekurov N, Tittonen I (2010) The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching. Nanotechnology 21:14530110.1088/0957-4484/21/14/145301 ↗
17. Ryu Cho YK, Rawlings CD, Wolf H, Spieser M, Bisig S, Reidt S, Sousa M, Khanal SR, Jacobs TDB, Knoll AW (2017) Sub-10 nanometer feature size in silicon using thermal scanning probe lithography. ACS Nano 11:11890–1189710.1021/acsnano.7b06307 ↗
18. Meng BB, Yuan DD, Zheng J, Qiu P, Xu SL (2020) Tip-based nanomanufacturing process of single crystal SiC: ductile deformation mechanism and process optimization. Appl Surf Sci 500:14403910.1016/j.apsusc.2019.144039 ↗
19. Guo J, Song CF, Li XY, Yu BJ, Dong HS, Qian LM, Zhou ZR (2012) Fabrication mechanism of friction-induced selective etching on Si (100) surface. Nanoscale Res Lett 7:15210.1186/1556-276X-7-152 ↗
20. Wu L, Fan ZT, Peng Y, Zhou HC, Wang HB, Yu BJ, Qian LM (2019) Rapid nanofabrication via UV-assisted selective etching on GaAs without templates. Chem Phys Lett 717:152–15710.1016/j.cplett.2019.01.007 ↗
21. Song CF, Li XY, Cui SX, Dong HS, Yu BJ, Qian LM (2013) Maskless and low-destructive nanofabrication on quartz by friction-induced selective etching. Nanoscale Res Lett 8:14010.1186/1556-276X-8-140 ↗
22. Zhou C, Li JM, Wu L, Guo GR, Wang HB, Chen P, Yu BJ, Qian LM (2018) Friction-induced selective etching on silicon by TMAH solution. RSC Adv 8:36043–3604810.1039/C8RA07064D ↗
23. Rietig A, Langner T, Acker J (2019) A revised model of silicon oxidation during the dissolution of silicon in HF/HNO3 mixtures. Phys Chem Chem Phys 21:22002–2201310.1039/C9CP04429A ↗
24. Acker J, Langner T, Meinel B, Sieber T (2018) Saw damage as an etch mask for the acidic texturization of multicrystalline silicon wafers. Mater Sci Semicon Proc 74:238–24810.1016/j.mssp.2017.09.039 ↗
25. Chen CY, Wong CP (2015) Unveiling the shape-diversified silicon nanowires made by HF/HNO3 isotropic etching with the assistance of silver. Nanoscale 7:1216–122310.1039/C4NR05949B ↗
26. Steinert M, Acker J, Oswald S, Wetzig K (2007) Study on the mechanism of silicon etching in HNO3-rich HF/HNO3 mixtures. J Phys Chemi C 111:2133–214010.1021/jp066348j ↗
27. Wu L, Yu BJ, Zhang P, Feng CQ, Chen P, Deng L, Gao J, Chen SM, Jiang SL, Qian LM (2020) Rapid identification of ultrathin amorphous damage on monocrystalline silicon surface. Phys Chem Chem Phys 22:12987–1299510.1039/D0CP01370F ↗
28. Wang HB, Deng CB, Xiao C, Liu LY, Liu JW, Peng Y, Yu BJ, Qian LM (2019) Fast and maskless nanofabrication for high-quality nanochannels. Sens Actuat B-Chem 288:383–39110.1016/j.snb.2019.03.001 ↗
29. Mir A, Luo XC, Sun JN (2016) The investigation of influence of tool wear on ductile to brittle transition in single point diamond turning of silicon. Wear 364–365:233–24310.1016/j.wear.2016.08.003 ↗
30. Yu BJ, Li XY, Dong HS, Chen YF, Qian LM, Zhou ZR (2012) Towards a deeper understanding of the formation of friction-induced hillocks on monocrystalline silicon. J Phys D Appl Phys 45:14530110.1088/0022-3727/45/14/145301 ↗
31. Johnson KL (1985) Contact mechanics. Cambridge University Press, Cambridge, UK10.1017/CBO9781139171731 ↗
32. Minor AM, Lilleodden ET, Jin M, Stach EA, Chrzan DC, Morris JW (2005) Room temperature dislocation plasticity in silicon. Philos Mag 85:323–33010.1080/14786430412331315680 ↗
33. Turner DR (1960) On the mechanism of chemically etching germanium and silicon. J Electrochem Soc 107:81010.1149/1.2427519 ↗
34. Biegelsen DK, Stutzmann M (1986) Hyperfine studies of dangling bonds in amorphous silicon. Phys Rev B 33:3006–301110.1103/PhysRevB.33.3006 ↗
35. Duan XF, Wang JC, Huang YQ, Liu K, Shang YF, Zhou GR, Ren XM (2016) Mushroom-mesa photodetectors using subwavelength gratings as focusing reflectors. IEEE Photonic Tech Lett 28:2273–227610.1109/LPT.2016.2591955 ↗