Ge- and Al-related point defects generated by gamma irradiation in nanostructured erbium-doped optical fiber preforms
Source abstract
Abstract
Erbium-doped amplifiers (EDFAs) are of special interest for space applications. In this environment, the ionizing radiations decrease the gain of these optical amplifiers, due to the ionization of defects precursors, mainly linked to dopants as Germanium (Ge), Aluminum (Al), or Phosphorus (P). The aim of this work is to study the influence of the Ge and Al relative concentration on the radiation resistance of different nanostructured fiber preforms, manufactured by Modified Chemical Vapor Deposition (MCVD), in which various types of nanoparticles (Er@SiO2-NP, Al2O3-NP, and Er@Al2O3-NP) have been introduced in the silica matrix. The radiation resistance of these fibers has been compared with that of standard MCVD Er-doped preforms. All of them have been characterized by optical absorption and Electronic Paramagnetic Resonance (EPR) spectroscopies before and after irradiation with a total gamma dose of 5.9 kGy. EPR results show that Al-related defects are not observed in fiber preforms with Ge concentrations higher than 4.4 wt%. We also demonstrated that NP technology can limit the formation of Aluminum-Oxygen Hole Centers (AlOHCs), reducing the Radiation-Induced Attenuation at the energy of interest for EDFAs.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Glass properties and applications · Photonic Crystal and Fiber Optics · Optical Network Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (73)
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