DataVXACS Applied Electronic MaterialsPaper
journal article·2024-11-26

Influence of Substrate Defects on the Electronic Properties of the WS2 Monolayer/Highly Oriented Pyrolytic Graphite Heterostructure

Thathsara D. Maddumapatabandi, Fabio Bussolotti, Wei Fu, Hiroyo Kawai, Kuan Eng Johnson Goh

ACS Applied Electronic Materials· Volume 6· Issue 11
Publisher page
Source abstract

Abstract

This study investigates the influence of local defects introduced in highly oriented pyrolytic graphite (HOPG) substrates on the electronic properties of two-dimensional transition-metal dichalcogenides (TMDs). Utilizing a combination of X-ray photoelectron spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES), we studied the changes in energy level alignment and interface charge transfer phenomena at the HOPG/WS 2 interface. While XPS did not detect significant spectral changes for defect densities up to ∼7%, ARPES line shape analysis revealed that the increased defect density in the HOPG interfacing the WS 2 monolayer significantly shortened carrier lifetimes. This provides crucial guidance for the study and optimization of devices wherein TMDs are interfaced with a HOPG or graphene.
Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Quantum Innovation Centre (Q.InC), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore

Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore

Institute of High-Performance Computing (IHPC), Agency for Science, Technology and Research, (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore

Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore

Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

Funding

Agency for Science, Technology and Research · National Research Foundation Singapore

References (61)

Show source-provided references
1. 10.1038/nchem.158910.1038/nchem.1589 ↗
2. 10.1038/nnano.2012.19310.1038/nnano.2012.193 ↗
3. 10.1088/2399-1984/aac9d710.1088/2399-1984/aac9d7 ↗
4. 10.3390/electronics602004310.3390/electronics6020043 ↗
5. 10.1116/1.498273610.1116/1.4982736 ↗
6. 10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
7. 10.1002/inf2.1216110.1002/inf2.12161 ↗
8. 10.1021/acsnano.0c0966610.1021/acsnano.0c09666 ↗
9. 10.1142/1206610.1142/12066 ↗
10. 10.1039/C8RA00635K10.1039/C8RA00635K ↗
11. 10.1186/s40580-015-0042-x10.1186/s40580-015-0042-x ↗
12. 10.1103/PhysRevLett.114.14680410.1103/PhysRevLett.114.146804 ↗
13. 10.1038/s42005-019-0212-y10.1038/s42005-019-0212-y ↗
14. 10.1039/C8NA00212F10.1039/C8NA00212F ↗
15. 10.1021/acs.jpclett.7b0051810.1021/acs.jpclett.7b00518 ↗
16. 10.1021/acsnano.0c0798210.1021/acsnano.0c07982 ↗
17. 10.3390/nano1405041010.3390/nano14050410 ↗
18. 10.1021/acs.jpcc.8b1097110.1021/acs.jpcc.8b10971 ↗
19. 10.1002/adma.20210842510.1002/adma.202108425 ↗
20. 10.1016/j.carbon.2015.05.04910.1016/j.carbon.2015.05.049 ↗
21. 10.1038/s41699-020-00162-410.1038/s41699-020-00162-4 ↗
22. 10.1038/ncomms729810.1038/ncomms7298 ↗
23. 10.1038/ncomms1525110.1038/ncomms15251 ↗
24. 10.1021/acsnano.6b0827810.1021/acsnano.6b08278 ↗
25. 10.1103/PhysRevB.99.04513410.1103/PhysRevB.99.045134 ↗
26. 10.1103/PhysRevB.103.04541210.1103/PhysRevB.103.045412 ↗
27. 10.1088/2053-1583/ac234f10.1088/2053-1583/ac234f ↗
28. 10.1021/acsnano.0c0591510.1021/acsnano.0c05915 ↗
29. 10.1016/C2017-0-04777-810.1016/C2017-0-04777-8 ↗
30. 10.1002/qute.20190012310.1002/qute.201900123 ↗
31. 10.1016/j.carbon.2007.09.03610.1016/j.carbon.2007.09.036 ↗
32. 10.1002/cctc.20150034410.1002/cctc.201500344 ↗
33. 10.1002/sia.648710.1002/sia.6487 ↗
34. 10.1016/j.apsusc.2022.15268010.1016/j.apsusc.2022.152680 ↗
35. 10.1016/j.carbon.2004.03.00510.1016/j.carbon.2004.03.005 ↗
36. 10.3390/c703005110.3390/c7030051 ↗
37. 10.1016/j.apsusc.2018.01.14810.1016/j.apsusc.2018.01.148 ↗
38. 10.1021/acs.analchem.6b0132710.1021/acs.analchem.6b01327 ↗
39. 10.1016/j.carbon.2016.11.00210.1016/j.carbon.2016.11.002 ↗
40. 10.1002/sia.648710.1002/sia.6487 ↗
41. 10.1103/PhysRevB.80.09451910.1103/PhysRevB.80.094519 ↗
42. 10.1002/sia.74001010310.1002/sia.740010103 ↗
43. 10.1021/la990402o10.1021/la990402o ↗
44. 10.1007/s00339-010-5643-y10.1007/s00339-010-5643-y ↗
45. 10.1038/s41598-017-16251-210.1038/s41598-017-16251-2 ↗
46. 10.1021/acsomega.1c0453210.1021/acsomega.1c04532 ↗
47. 10.1038/srep1915910.1038/srep19159 ↗
48. 10.1021/acsnano.5b0767710.1021/acsnano.5b07677 ↗
49. 10.1103/PhysRevB.97.15542110.1103/PhysRevB.97.155421 ↗
50. 10.1038/s41598-020-74024-w10.1038/s41598-020-74024-w ↗
51. 10.1021/acs.jpcc.1c0161210.1021/acs.jpcc.1c01612 ↗
52. 10.1063/1.271716510.1063/1.2717165 ↗
53. 10.1103/PhysRevB.96.20542310.1103/PhysRevB.96.205423 ↗
54. 10.1103/PhysRevB.86.19543110.1103/PhysRevB.86.195431 ↗
55. 10.1063/1.492970210.1063/1.4929702 ↗
56. 10.1038/s42005-019-0166-010.1038/s42005-019-0166-0 ↗
57. 10.1088/2633-4356/acd90710.1088/2633-4356/acd907 ↗
58. 10.1103/PhysRevB.92.22450610.1103/PhysRevB.92.224506 ↗
59. 10.1103/PhysRevLett.92.24610610.1103/PhysRevLett.92.246106 ↗
60. 10.1103/PhysRevB.5.470910.1103/PhysRevB.5.4709 ↗
61. Wagner C. D. · 1979