Piezoresistive response of ITO films deposited at room temperature by magnetron sputtering
Source abstract
Abstract
Indium tin oxide (ITO) thin films have been deposited on (100) Si substrates by RF magnetron sput- tering from a compact target (90% In2O3-10% SnO2 in weight) with 6 in. in diameter. In order to perform elec- tromechanical characterizations of these films, strain gau- ges were fabricated. An experimental set-up based on bending beam theory was developed to determine the longitudinal piezoresistive coefficient (pl) of the strain gauges fabricated. It has been confirmed that electrical resistance of the strain gauges decreases with load increa- ses which results a negative gauge factor. A model based on the activation energy was used to explain the origin of this negative signal. The influence of the temperature on piezoresistive properties of ITO films was also evaluated.
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Research context
OpenAlex topics: Advanced Sensor Technologies Research · Acoustic Wave Resonator Technologies · Electrical and Thermal Properties of Materials
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