Nonconformal Electrochemical Memristor through Vapor Phase Polymerization of Pyrrole

A nonvolatile organic synaptic memristor was fabricated utilizing a vapor phase polymerization technique for synthesizing polypyrrole. This synaptic memristor employed a bottom synaptic electrode in order to “read” the device’s conductance, termed the synaptic weight of this neuromorphic-capable device. Through a programming pulse of +1 V amplitude and a 1 s duration to the “writing” electrode, or top synaptic electrode, a resolution of 0.245 μS occurs per change for each programmed state. This organic synaptic memristor consumes a minimum programming power of 4.16 fJ mm –2 and can be further decreased via advanced patterning and layer deposition techniques. Operational applications are demonstrated for this organic synaptic memristor, including Boolean algebra (AND, NAND, OR, and NOR logic gates), as well as abacus calculations (addition, subtraction, and division).