Thermal Confinement by Monolayer MoS2 for Reduced RESET Current in Phase Change Memory Pillar Cells
Source abstract
Abstract
Phase change memory (PCM) is one of the most promising nonvolatile memory technologies for high-density, high-endurance, fast-switching, and multilevel data storage. However, the high RESET current requirement remains a critical bottleneck in the development of PCM technology. In this work, we propose a pillar-shaped PCM device that consists of a Ge 2 Sb 2 Te 5 (GST) layer sandwiched between the top and the bottom TiN electrodes. An atomically thin layer of MoS 2 is grown on top of the oxidized bottom TiN layer. A filament formed through the TiO 2 and MoS 2 layers enables electrical conduction, while the high thermal resistivity of MoS 2 ensures excellent thermal confinement within the GST layer. Finite element simulations show a 91% reduction in RESET current brought about by the filament, while the use of MoS 2 yields a further ∼30% decrease in the switching power. The results presented here demonstrate the potential use of two-dimensional (2D) materials with conventional PCM cells to reduce switching power.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Advanced Memory and Neural Computing · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Electronic Engineering, United International University, United City, Madani Avenue, Badda, Dhaka-1212, Bangladesh
Department of Electrical and Electronic Engineering, University of Dhaka, Dhaka-1000, Bangladesh
Department of Electrical and Electronic Engineering, American International University−Bangladesh, 408/1, Kuratoli, Khilkhet, Dhaka-1229, Bangladesh
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
Department of Electrical and Computer Engineering, North South University, Bashundhara, Dhaka-1229, Bangladesh
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