Resistance Switch in a Minimal-Fullerene Chain in Vertically Stacked Electrodes
Source abstract
Abstract
A switch element with a minimal-fullerene chain was prepared by spin coating a C 60 pyrrolidine tris-acid (CPTA) film between two vertically stacked metallic electrodes. In this structure, the nanoscale length of the fullerene chain can be adjusted by changing the thickness of the CPTA film by changing spin-coating condition. The CPTA film had a rough surface that led to cause distance fluctuations between the two electrodes. At the thinnest point, a nanoscale chain could be selectively formed as a conductive channel that potentially exhibited binary resistance switching between high- and low-resistance states. This resistance change was primarily caused by the polymerization and depolymerization of the nanoscale C 60 chain in response to external voltage inputs. When the film thickness was reduced to approximately 3.7 nm, corresponding to 3–4 fullerene chains bridging the two electrodes, a stable switching sequence was reproducibly achieved.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Conducting polymers and applications · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Faculty of Engineering, Chiba Institute of Technology, Tsudanuma,Narashino, Chiba 275-0016, Japan
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
Electronic Functional Macromolecules Group, Research Center for Macromolecules and Biomaterials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
Funding
Japan Society for the Promotion of Science
References (57)
Show source-provided references
1. 10.1007/s10854-021-07415-y10.1007/s10854-021-07415-y ↗
2. 10.1021/acsami.8b0906810.1021/acsami.8b09068 ↗
3. 10.1021/acsami.9b1632510.1021/acsami.9b16325 ↗
4. 10.1021/acsami.7b1764510.1021/acsami.7b17645 ↗
5. 10.1039/C8FD00106E10.1039/C8FD00106E ↗
6. 10.1088/0022-3727/42/5/05511210.1088/0022-3727/42/5/055112 ↗
7. 10.1016/j.mee.2017.04.03310.1016/j.mee.2017.04.033 ↗
8. Wei Z. · 2012 4th IEEE International Memory Workshop · 2012 · 4 · 1
9. 10.1063/1.274984610.1063/1.2749846 ↗
10. 10.1021/nn101758210.1021/nn1017582 ↗
11. 10.1002/aelm.20210075810.1002/aelm.202100758 ↗
12. 10.1109/TED.2019.295236110.1109/TED.2019.2952361 ↗
13. 10.1021/acsaelm.9b0058210.1021/acsaelm.9b00582 ↗
14. 10.1002/adma.20130263710.1002/adma.201302637 ↗
15. 10.1109/LED.2012.222463310.1109/LED.2012.2224633 ↗
16. 10.1021/acsanm.0c0314410.1021/acsanm.0c03144 ↗
17. 10.1021/acsanm.1c0126510.1021/acsanm.1c01265 ↗
18. 10.1021/acsanm.2c0052310.1021/acsanm.2c00523 ↗
19. 10.1021/acsaelm.3c0025310.1021/acsaelm.3c00253 ↗
20. 10.1021/ar00015a01110.1021/ar00015a011 ↗
21. 10.1007/s00339005048310.1007/s003390050483 ↗
22. 10.1021/acs.jpca.7b0280510.1021/acs.jpca.7b02805 ↗
23. 10.1039/C7CP07965F10.1039/C7CP07965F ↗
24. 10.1039/C6OB00869K10.1039/C6OB00869K ↗
25. 10.1021/jp077121710.1021/jp0771217 ↗
26. 10.1021/acsami.9b1137010.1021/acsami.9b11370 ↗
27. 10.1246/cl.2012.75410.1246/cl.2012.754 ↗
28. 10.1002/aenm.20170114410.1002/aenm.201701144 ↗
29. 10.1039/c4ra02254h10.1039/c4ra02254h ↗
30. 10.1038/nmat254810.1038/nmat2548 ↗
31. 10.1002/adfm.20190362110.1002/adfm.201903621 ↗
32. 10.1039/D0TA08752A10.1039/D0TA08752A ↗
33. 10.1021/acsaem.2c0364010.1021/acsaem.2c03640 ↗
34. 10.1063/1.154294310.1063/1.1542943 ↗
35. 10.1016/j.carbon.2014.09.04910.1016/j.carbon.2014.09.049 ↗
36. 10.1016/j.jpcs.2003.08.04010.1016/j.jpcs.2003.08.040 ↗
37. 10.1088/1742-6596/61/1/17910.1088/1742-6596/61/1/179 ↗
38. 10.1016/j.carbon.2011.01.00410.1016/j.carbon.2011.01.004 ↗
39. 10.1063/1.302826310.1063/1.3028263 ↗
40. 10.1016/j.carbon.2019.06.08910.1016/j.carbon.2019.06.089 ↗
41. 10.1016/j.carbon.2019.12.04610.1016/j.carbon.2019.12.046 ↗
42. 10.1016/j.carbon.2005.06.01310.1016/j.carbon.2005.06.013 ↗
43. 10.2320/jinstmet.71.21810.2320/jinstmet.71.218 ↗
44. 10.1103/PhysRev.74.175910.1103/PhysRev.74.1759 ↗
45. 10.1143/JJAP.39.187210.1143/JJAP.39.1872 ↗
46. 10.1016/0009-2614(93)E1409-A10.1016/0009-2614(93)E1409-A ↗
47. 10.1021/cm500594u10.1021/cm500594u ↗
48. 10.1016/j.diamond.2021.10842710.1016/j.diamond.2021.108427 ↗
49. 10.1103/PhysRevLett.97.19610110.1103/PhysRevLett.97.196101 ↗
50. 10.7567/JJAP.55.1102B410.7567/JJAP.55.1102B4 ↗
51. 10.1002/adma.20090296010.1002/adma.200902960 ↗
52. 10.1002/adma.20220908810.1002/adma.202209088 ↗
53. 10.1063/5.014939310.1063/5.0149393 ↗
54. 10.1088/2634-4386/ac4a8310.1088/2634-4386/ac4a83 ↗
55. 10.1038/s41378-023-00487-210.1038/s41378-023-00487-2 ↗
56. 10.1098/rsta.2019.006110.1098/rsta.2019.0061 ↗
57. 10.1021/acsaelm.3c0047210.1021/acsaelm.3c00472 ↗