journal article·2012-10

Growth and optical properties of Sn–Si nanocomposite thin films

Md. Ahamad Mohiddon, M. Ghanashyam Krishna

Journal of Materials Science· Volume 47· Issue 19
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Abstract

The growth and optical properties of nanocomposite thin films comprising of nanocrystalline Sn and Si are reported. The nanocomposite films are produced by thermal annealing of bilayers of Sn and Si deposited on borosilicate glass substrates at various temperatures from 300 to 500 °C for 1 h in air. X-ray diffraction reveals that the as-deposited bilayers consist of nanocrystalline Sn films with a crystallite size of 30 nm, while the Si thin films are amorphous. There is onset of crystallinity in Si on annealing to 300 °C with the appearance of the (111) peak of the diamond cubic structure. The crystallite size of Si increases from 5 to 18 nm, whereas the Sn crystallite size decreases with increase in annealing temperature. Significantly, there is no evidence for any Sn–Si compound, and therefore it is concluded that the films are nanocomposites of Sn and Si. Measured spectral transmittance curves show that the films have high optical absorption in the as-deposited form which decreases on annealing to 300 °C. The films show almost 80 % transmission in the visible-near infrared region when the annealing temperature is increased to 500 °C. There is concomitant decrease in refractive index from 4.0, at 1750 nm, for the as-deposited film, to 1.88 for the film annealed at 500 °C. The optical band gap of the films increases on annealing (from 1.8 to ~2.9 eV at 500 °C). The Sn-Si nanocomposites have high refractive index, large band gap, and low optical absorption, and can therefore be used in many optical applications.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces · Quantum Dots Synthesis And Properties

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References (24)

Show source-provided references
1. Rumpf K, Granitzer P, Poelt P (2010) J Magn Magn Mater 322:128310.1016/j.jmmm.2009.04.075 ↗
2. Sharma AK, Gupta BD (2007) J Opt A 9:18010.1088/1464-4258/9/2/011 ↗
3. Zide JMO, Bahk JH, Singh R, Zebarjadi M, Zeng G, Lu H, Feser JP, Xu D, Singer SL, Bian ZX, Majumdar A, Bowers JE, Shakouri A, Gossard AC (2010) J Appl Phys 108:12370210.1063/1.3514145 ↗
4. Ballesteros JM, Solis J, Serna R, Afonso CN (1999) Appl Phys Lett 74:279110.1063/1.124015 ↗
5. Ahamad Mohiddon Md, Ghanashyam Krishna M (2011) J Mater Sci 46:2672. doi: 10.1007/s10853-010-5124-x10.1007/s10853-010-5124-x ↗
6. Mohiddon MA, Naidu KL, Krishna MG, Dalba G, Rocca F (2011) J Nanopart Res 13:599910.1007/s11051-011-0444-6 ↗
7. Mahendra Kumar KU, Brahma R, Ghanashyam Krishna M, Bhatnagar AK, Dalba G (2007) J Phys 19. doi: 10.1088/0953-8984/19/49/49620810.1088/0953-8984/19/49/496208 ↗
8. Kumar KUM, Ghanashyam Krishna M (2008) J. Nanomater. doi: 10.1155/2008/73653410.1155/2008/736534 ↗
9. Hultman L, Robertson A, Hentzell HT, Engsstrom I, Psaras PA (1987) J Appl Phys 62:364710.1063/1.339244 ↗
10. Mohiddon MA, Naidu KL, Dalba G, Rocca F, Krishna MG (2012) Phys Status Solidi C 9:149310.1002/pssc.201100624 ↗
11. Oliver N, Hartmann AJ (2000) J Appl Phys 88:71610.1063/1.373727 ↗
12. Jeon M, Jeong C, Kamisako K (2010) Mater Sci Technol 26:87510.1179/026708309X12454008169500 ↗
13. Emoto T, Akimoto K, Ishikawa Y, Ichimiya A, Tanikawa A (2000) Thin Solid Films 369:28110.1016/S0040-6090(00)00879-8 ↗
14. Swanepoel R (1983) J Phys E 16:121410.1088/0022-3735/16/12/023 ↗
15. Dahmen U, Hetherington CJ, Pirouz P, Westmacott KH (1989) Scr Metall 23:26910.1016/0036-9748(89)90424-9 ↗
16. Roman LS, Valaski R, Canestraro CD, Magalha ECS, Persson C, Ahuja R, da Silva Jr EF, Pepe I, Ferreira da Silva A (2006) Appl Surf Sci 252:536110.1016/j.apsusc.2005.12.040 ↗
17. Dow JD (1972) Comments Solid State Phys 4:35
18. Dow JD, Redfield D (1972) Phys Rev B 5:59410.1103/PhysRevB.5.594 ↗
19. Hayzelden C, Batstone JL (1993) J Appl Phys 73:827910.1063/1.353446 ↗
20. Srivastava AK, Sood KN, Kishore R, Naseem HA (2006) Electrochem Solid-State Lett 9:G21910.1149/1.2197107 ↗
21. Nast O, Wenham SR (2000) J Appl Phys 88:12410.1063/1.373632 ↗
22. Leonard RT, Koch CC (1992) Nanostruct Mater 1:47110.1016/0965-9773(92)90080-H ↗
23. Wang ZM, Wang YJ, Jeurgens LPH, Mittemeijer EJ (2008) Phys Rev Lett 100. doi: 10.1103/PhysRevLett.100.12550310.1103/PhysRevLett.100.125503 ↗
24. Wang ZM, Wang YJ, Jeurgens LPH, Mittemeijer EJ (2008) Phys Rev B 77. doi: 10.1103/PhysRevB.77.04542410.1103/PhysRevB.77.045424 ↗