D.c. and a.c. electrical properties of vacuum evaporated thin SiO/GeO2 films
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Glass properties and applications · Transition Metal Oxide Nanomaterials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
Show source-provided references
1. F. Argall and A. K. Jonscher, Thin Solid Films 2 (1968) 185.10.1016/0040-6090(68)90002-3 ↗
2. A. E. Hill, A. M. Phahle and J. H. Calderwood, ibid. 5 (1970) 287.10.1016/0040-6090(70)90101-X ↗
3. S. Chan and C. K. Loh, ibid. 6 (1970) 91.10.1016/0040-6090(70)90066-0 ↗
4. M. S. Frost and A. K. Jonscher, ibid. 29 (1975) 7.10.1016/0040-6090(75)90211-4 ↗
5. A. Goswami and R. R. Varma, ibid. 28 (1975) 157.10.1016/0040-6090(75)90106-6 ↗
6. T. Mahalingam, M. Radhakrishnan and C. Balasubramanian, ibid. 78 (1981) 229.10.1016/0040-6090(89)90588-9 ↗
7. M. Chandra Shekhar and V. Hari Babu, J. Mater. Sci. Lett., 3 (1984) 600.10.1007/BF00719623 ↗
8. N. F. Mott and E. A. Davis, ?Electronic Processes in Non-Crystalline Materials? (Clarendon, Oxford, 1979).
9. J. A. Simmons, G. S. Nadkarni and M. C. Lancaster, J. Appl. Phys. 41 (1970) 538.10.1063/1.1658709 ↗
10. M. N. Khan, M. I. Khan and C. A. Hogarth, Phys. Rev. B 22 (1980) 6155.10.1103/PhysRevB.22.6155 ↗
11. A. S. M. S. Rahman and C. A. Hogarth, J. Mater. Sci. Lett. 5 (1986) 693.10.1007/BF01730213 ↗
12. M. Pollak, Phil. Mag. 23 (1971) 519.10.1080/14786437108216402 ↗
13. S. R. Elliott, ibid. 36 (1977) 1291.10.1080/14786437708238517 ↗
14. C. A. Hogarth and L. A. Wright, in Proceedings of the International Conference on the Physics of Semiconductors?, Moscow, S. M. Ryvkin (ed.) (Nauka, Leningrad, (1968) p. 1271.
15. P. A. Walley and A. K. Jonscher, Thin Solid Films 1 (1968) 367.10.1016/0040-6090(68)90026-6 ↗
16. J. G. Simmons, ?D.C. Conduction in Thin Films? (Mills and Boon, London, (1971) p. 45.
17. A. K. Jonscher and R. M. Hill, ?Physics of Thin Films?, (edited by G. Hass, M. H. Francombe and R. W. Hoggman, 1975) p. 169.
18. M. Sayer and A. Mansingh, Phys. Rev. B, 6 (1972) 4629.10.1103/PhysRevB.6.4629 ↗
19. C. R. Dutta and K. Barua, Thin Solid Films 100 (1983) 149.10.1016/0040-6090(83)90470-4 ↗
20. S. R. Pollack, J. Appl. Phys. 34 (1963) 877.10.1063/1.1729554 ↗
21. R. M. Hill and A. K. Jonscher, J. Non-Cryst. Solids 32 (1979) 53.10.1016/0022-3093(79)90064-4 ↗
22. W. S. Chan and A. K. Jonscher, Phys. Status Solidi 32 (1969) 749.10.1002/pssb.19690320228 ↗
23. A. E. Owen and J. M. Robertson, J. Non-Cryst. Solids 2 (1970) 40.10.1016/0022-3093(70)90119-5 ↗
24. M. Pollak and T. H. Geballe, Phys. Rev. 122 (1961) 1742.10.1103/PhysRev.122.1742 ↗
25. M. Pollak, Phys. Rev. 138A (1965) 1822.10.1103/PhysRev.138.A1822 ↗
26. H. K. Rockstad, J. Non-Cryst. Solids 8?10 (1972) 621.10.1016/0022-3093(72)90201-3 ↗
27. M. Meaudre and R. Meaudre, Phil. Mag. B. 40 (1979) 401.10.1080/13642817908246381 ↗
28. A. S. M. S. Rahman, M. H. Islam and C. A. Hogarth, Int. J. Electron. 62 (1987) 685.10.1080/00207218708921021 ↗
29. S. R. Elliott, Phil. Mag. B 37 (1978) 553.10.1080/01418637808226448 ↗
30. K. L. Chopra and C. K. Bahl, Phys. Rev. B. 1 (1970) 2545.10.1103/PhysRevB.1.2545 ↗
31. N. Bluzer and S. K. Bahl, in ?Amorphous and Liquid Semiconductors?, Vol. 2, edited by J. Stuke and W. Brenig (Taylor and Francis, London, 1974) p. 1209.
32. W. E. Spear, in ?Amorphous and Liquid Semiconductors?, Vol. 1, edited by J. Stuke and W. Brenig (Taylor and Francis, London, 1974) p. 1.
33. G. Austin and N. F. Mott, Adv. Phys. 18 (1969) 41.10.1080/00018736900101267 ↗
34. A. Goswami and A. P. Goswami, Thin Solid Films 16 (1973) 175.10.1016/0040-6090(73)90166-1 ↗
35. A. R. Long and W. R. Hogg, J. Non-Cryst. Solids 59?60 (1983) 1095.10.1016/0022-3093(83)90357-5 ↗