Electrical and optical properties of Indium sesquitelluride (In2Te3) thin films
Source abstract
Abstract
Indium sesquitelluride (In2Te3) thin films were grown on glass substrates using a flash evaporation technique. The nature of contact phenomena of Ag, Sn, In, Zn, Al-(p) In2Te3 junctions had been investigated. Ag, Sn, In and Zn metals were found to provide ohmic contact for In2Te3 thin films. The variation of DC-electrical resistivity of In2Te3 thin films with temperature was studied at different substrate temperatures. The optical measurements revealed that the flash evaporated In2Te3 thin films possessing direct energy band-gap. The variation of optical energy gap with substrate temperature was investigated. Film thickness, substrate temperature, composition and crystallinity were found to determine the optimization of electrical and optical properties of In2Te3 thin film.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides · Nonlinear Optical Materials Research
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