Spatially Resolved Investigation of the Bandgap Variation across a β-(AlxGa1–x)2O3/β-Ga2O3 Interface by STEM–VEELS
Source abstract
Abstract
Alloying β-(AlxGa1–x)2O3 on a β-Ga2O3 substrate results in a heterojunction with a tunable bandgap, but is often plagued by defects in the interface region. In this work, using valence electron energy loss spectroscopy combined with density functional theory calculations, we identify a high concentration of cation interstitials at a β-(Al0.2Ga0.8)2O3/β-Ga2O3 interface and measure the optical absorption edge. We find a dip in the band edge of 0.1 eV depth and a width of around 15 nm on the β-Ga2O3 side of the interface with signs of noticeable electron probe delocalization broadening and discuss defect states versus excitons as its possible origins.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park 16802, United States
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, United States
Funding
Air Force Office of Scientific Research · Division of Materials Research
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