Position-Sensitive and High-Performance Photodetection Observed in Carbon NanoFilm Based on Silicon Carbide
Source abstract
Abstract
A high-performance photodetector is reported in a carbon/silicon carbide (SiC) structure. Besides the advantages of owning a significant amplification on photocurrent, the detector has a wide detection zone and a strong immunity to temperature variation. Demonstrated in experiments, these properties are mainly contributed by the combination of applied electric voltage and local electromagnetic field enhancement at structure surface. Because of the merits of low cost and high photoelectric performance, this structure is considered to be a promising prospect in photodetection.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Diamond and Carbon-based Materials Research · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Science, North University of China, Xueyuan Road Third, Taiyuan, ShanXi 030051, China
Funding
Natural Science Foundation of Shanxi Province · National Natural Science Foundation of China
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