Low-Voltage Gallium Oxide Memristor with Enhanced Cyclic Endurance, Stability, and Memory Window

We present an Al/Cu/GaO x /Au memristor that combines low-voltage operation (set and reset voltages of 0.48 and −0.3 V, respectively), high cyclic endurance (>13,987 cycles), a large memory window (∼4900), and stable multilevel resistance states. These outstanding properties are achieved by leveraging the synergistic interaction between a Cu-based electrochemical metallization mechanism and a GaO x intermediate layer. Comparative studies and atomistic simulations reveal that the low energy barrier for Cu diffusion into GaO x is pivotal in enhancing device performance, enabling superior functionality compared to previously reported GaO x -based memristors. This memristor supports reliable multilevel resistance programming via compliance current modulation and voltage-controlled filament rupture. Furthermore, its exceptional endurance, among the highest reported for GaO x memristors, was validated through rigorous current–voltage cycling tests and voltage pulse measurements. This work establishes the Al/Cu/GaO x /Au memristor as a promising configuration for advancing nonvolatile memory technologies, offering significant potential for high-performance, low-power storage, and neuromorphic computing solutions.