Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering
Source abstract
Abstract
In-situ thermal annealing (673-1273 K) during X-ray diffraction synchrotron measurements was performed to monitor the strain level as a proxy to follow the recovery of 300 keV Ar ion irradiated 4H-SiC single crystals. Results show that, when exposed to Ar ions at a fluence of 6.7 × 10 14 ions/cm 2 (0.7 dpa), the material suffers a maximum strain of 12% that reduces to 2% after the final anneal at 1273 K. In the same time, the disorder derived from the XRD data also demonstrates a thermal recovery of the crystalline structure. Hence, this work presents ion irradiation as a means to induce specific crystalline order and depth-controlled strain states within a few 100s of nm window in 4H-SiC.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Diamond and Carbon-based Materials Research · Silicon and Solar Cell Technologies
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