The lead selenide photoconductive sensitization via oxygen ion implantation with enhanced optical absorption and carrier mobility
Source abstract
Abstract
We demonstrate a lead selenide material sensitization method using O+ beam implantation at 50 keV. A nano-polycrystalline material with ~29 nm grain size is synthesized, which is completely different with the currently diffused material in submicron scale. This nano-material exhibits high carrier mobility and optical absorption with an Urbach energy as low as 29.5 meV, indicating a well-ordered microstructure. The responsivity of up to ~2 A/W at 4 μm is achieved for sample with implantation dose of 1 × 1018 cm−2. It is revealed that the high responsivity may be attributed to the high optical absorption and carrier mobility.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Semiconductor materials and interfaces
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References (28)
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1. Diezhandino J, Vergara G, Pérez G, Génova I, Rodrigo MT, Sánchez FJ, Torquemada MC, Villamayor V, Plaza J, Catalán I, Almazán R, Verdú M, Rodríguez P, Gómez LJ, Montojo MT (2003) Monolithic integration of spectrally selective uncooled lead selenide detectors for low cost applications. Appl Phys Lett 83(14):2751–275310.1063/1.1615314 ↗
2. Qiu JJ, Weng BB, Yuan ZJ, Shi ZS (2013) Study of sensitization process on mid-infrared uncooled PbSe photoconductive detectors leads to high detectivity. J Appl Phys 113(10):10310210.1063/1.4794492 ↗
3. Yang H, Chen L, Li XJ, Zheng JB (2016) Intrinsic stoichiometry optimization of polycrystalline lead selenide film in the sensitization process by iodine concentration regulation. Mater Lett 169:273–27710.1016/j.matlet.2016.01.054 ↗
4. Kastek M, Piątkowski T, Polakowski H, Barela J, Firmanty K, Trzaskawka P, Vergara G, Linares R, Gutierrez R, Fernandez C, Montojo MT (2014) Technology of uncooled fast polycrystalline PbSe focal plane arrays in systems for muzzle flash detection. Proc SPIE 9074:90740a10.1117/12.2053284 ↗
5. Bangert U, Pierce W, Kepaptsoglou DM, Ramasse Q, Zan R, Gass MH, Van den Berg JA, Boothroyd CB, Amani J, Hofsäss H (2013) Ion implantation of graphene-toward IC compatible technologies. Nano Lett 13(10):4902–490710.1021/nl402812y ↗
6. Garaj S, Hubbard W, Golovchenko JA (2010) Graphene synthesis by ion implantation. Appl Phys Lett 97(18):18310310.1063/1.3507287 ↗
7. Popok VN (2012) Ion implantation of polymers: formation of nanoparticulate materials. Rev Adv Mater Sci 30(1):1–26
8. Xu R, Wu G, Yang X, Hu T, Lu Q, Chu PK (2011) Controllable degradation of biomedical magnesium by chromium and oxygen dual ion implantation. Mater Lett 65(14):2171–217310.1016/j.matlet.2011.04.043 ↗
9. Yang G, Ingenito A, van Hameren N, Isabella O, Zeman M (2016) Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells. Appl Phys Lett 108(3):03390310.1063/1.4940364 ↗
10. Armstrong DEJ, Edmondson PD, Roberts SG (2013) Effects of sequential tungsten and helium ion implantation on nano-indentation hardness of tungsten. Appl Phys Lett 102(25):25190110.1063/1.4811825 ↗
11. Battiato A, Bosia F, Ferrari S, Olivero P, Sytchkova A, Vittone E (2012) Spectroscopic measurement of the refractive index of ion-implanted diamond. Opt Lett 37(4):671–67310.1364/OL.37.000671 ↗
12. Katsidis CC (2008) Refractive index, free carrier concentration, and mobility depth profiles of ion implanted Si: optical investigation using FTIR spectroscopy. J Opt Soc Am B 25(5):854–86410.1364/JOSAB.25.000854 ↗
13. Kepaptsoglou D, Hardcastle TP, Seabourne CR, Bangert U, Zan R, Amani JA, Hofsäss H, Nicholls RJ, Brydson RMD, Scott AJ, Ramasse QM (2015) Electronic structure modification of ion implanted graphene: the spectroscopic signatures of p-and n-type doping. ACS Nano 9(11):11398–1140710.1021/acsnano.5b05305 ↗
14. Yang H, Li XJ, Mei T, Zheng JB (2017) Deep inherent sensitization of lead selenide material via an effective oxygen ion preparation method. Mater Lett 194:142–14410.1016/j.matlet.2017.02.027 ↗
15. Weng B, Qiu J, Yuan Z, Larson PR, Strout GW, Shi Z (2014) Responsivity enhancement of mid-infrared PbSe detectors using CaF2 nano-structured antireflective coatings. Appl Phys Lett 104(2):02110910.1063/1.4861186 ↗
16. Torquemada MC, Rodrigo MT, Vergara G, Sánchez FJ, Almazán R, Verdú M, Rodríguez P, Villamayor V, Gómez LJ, Montojo MT, Muñoz A (2003) Role of halogens in the mechanism of sensitization of uncooled PbSe infrared photodetectors. J Appl Phys 93(3):1778–178410.1063/1.1534907 ↗
17. Zhao L, Qiu J, Weng B, Chang C, Yuan Z, Shi Z (2014) Understanding sensitization behavior of lead selenide photoconductive detectors by charge separation model. J Appl Phys 115(8):08450210.1063/1.4867038 ↗
18. Yang H, Chen L, Zheng J, Qiao K, Li X (2016) Influence of as-deposited conductive type on sensitization process of PbSe films. Appl Phys A 122(7):71010.1007/s00339-016-0226-1 ↗
19. Zhao F, Mukherjee S, Ma J, Li D, Elizondo SL, Shi Z (2008) Influence of oxygen passivation on optical properties of PbSe thin films. Appl Phys Lett 92(21):21111010.1063/1.2938417 ↗
20. Caglar M, Ilican S, Caglar Y, Yakuphanoglu F (2009) Electrical conductivity and optical properties of ZnO nanostructured thin film. Appl Surf Sci 255(8):4491–449610.1016/j.apsusc.2008.11.055 ↗
21. Feng W, Zhou H, Chen F (2015) Impact of thickness on crystal structure and optical properties for thermally evaporated PbSe thin films. Vacuum 114:82–8510.1016/j.vacuum.2015.01.007 ↗
22. Deng HX, Li SS, Li J (2010) Quantum confinement effects and electronic properties of SnO2 quantum wires and dots. J Phys Chem C 114(11):4841–484510.1021/jp911035z ↗
23. De Wolf S, Holovsky J, Moon SJ, Löper P, Niesen B, Ledinsky M, Haug FJ, Yum JH, Ballif C (2014) Organometallic halide perovskites: sharp optical absorption edge and its relation to photovoltaic performance. J Phys Chem Lett 5(6):1035–103910.1021/jz500279b ↗
24. Cody GD, Tiedje T, Abeles B, Brooks B, Goldstein Y (1981) Disorder and the optical-absorption edge of hydrogenated amorphous silicon. Phys Rev Lett 47(20):1480–148310.1103/PhysRevLett.47.1480 ↗
25. Sun XG, Gao KW, Pang XL, Yang HS, Volinsky AA (2015) Structure and composition effects on electrical and optical properties of sputtered PbSe thin films. Thin Solid Films 592:59–6810.1016/j.tsf.2015.09.009 ↗
26. Song QC, Zhou JW, Meroueh L, Broido D, Ren ZF, Chen G (2016) The effect of shallow vs. deep level doping on the performance of thermoelectric materials. Appl Phys Lett 109(26):26390210.1063/1.4973292 ↗
27. Wang X, Wang P, Wang J, Hu W, Zhou X, Guo N, Huang H, Sun S, Shen H, Lin T, Tang M, Liao L, Jiang A, Sun J, Meng X, Chen X, Lu W, Chu J (2015) Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics. Adv Mater 27(42):6575–658110.1002/adma.201503340 ↗
28. Masala S, Adinolfi V, Sun JP, Gobbo SD, Voznyy O, Kramer IJ, Hill IG, Sargent EH (2015) The silicon: colloidal quantum dot heterojunction. Adv Mater 27(45):7445–745010.1002/adma.201503212 ↗