DataVXJournal of Materials SciencePaper
journal article·2022-08

Carbon-related defect control of bulk hBN single crystals growth by atmospheric-pressure metal-flux-based fusion synthesis

Jiehua Cao, Ming Tian, Siyuan Zhang, Weiguo Hu, Neng Wan, Tao Lin

Journal of Materials Science· Volume 57· Issue 31
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OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · 2D Materials and Applications

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References (44)

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1. Zhang Y, Li M, Gu Y, Wang S, Zhang Z (2017) Preparation of high-content hexagonal boron nitride composite film and characterization of atomic oxygen erosion resistance. J Changchun Univ Earth Sci 402:182–191. https://doi.org/10.1016/j.apsusc.2017.01.07110.1016/j.apsusc.2017.01.071 ↗
2. Bhimanapati GR, Glavin NR, Robinson JA (2016) 2D boron nitride. In: Semiconductors and semimetals, p 101–14710.1016/bs.semsem.2016.04.004 ↗
3. Zhang K, Feng Y, Wang F, Yang Z, Wang J (2017) Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications. J Mater Chem C 5:11992–12022. https://doi.org/10.1039/c7tc04300g10.1039/c7tc04300g ↗
4. Dean CR, Young AF, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard KL, Hone J (2010) Boron nitride substrates for high-quality graphene electronics. Nat Nanotechnol 5:722–726. https://doi.org/10.1038/nnano.2010.17210.1038/nnano.2010.172 ↗
5. Li Q, Liu M, Zhang Y, Liu Z (2016) Hexagonal boron nitride-graphene heterostructures: synthesis and interfacial properties. Small 12:32–50. https://doi.org/10.1002/smll.20150176610.1002/smll.201501766 ↗
6. Qin B, Ma H, Hossain M, Zhong M, Xia Q, Li B, Duan X (2020) Substrates in the synthesis of two-dimensional materials via chemical vapor deposition. Chem Mater 32:10321–10347. https://doi.org/10.1021/acs.chemmater.0c0354910.1021/acs.chemmater.0c03549 ↗
7. Zhang J, Xie W, Xu X, Zhang S, Zhao J (2016) Structural and electronic properties of interfaces in graphene and hexagonal boron nitride lateral heterostructures. Chem Mater 28:5022–5028. https://doi.org/10.1021/acs.chemmater.6b0176410.1021/acs.chemmater.6b01764 ↗
8. Khan MA, Rathi S, Lim D, Yun SJ, Youn D-H, Watanabe K, Taniguchi T, Kim G-H (2018) Gate tunable self-biased diode based on few layered MoS2 and WSe2. Chem Mater 30:1011–1016. https://doi.org/10.1021/acs.chemmater.7b0486510.1021/acs.chemmater.7b04865 ↗
9. Yasuda K, Wang X, Watanabe K, Taniguchi T, Jarillo-Herrero P (2020) Stacking-engineered ferroelectricity in bilayer boron nitride. Science 372:1458–1462. https://doi.org/10.1126/science.abd323010.1126/science.abd3230 ↗
10. Wang X, Yasuda K, Zhang Y, Liu S, Watanabe K, Taniguchi T, Hone J, Fu L, Jarillo-Herrero P (2022) Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides. Nat Nanotechnol 17:367–371. https://doi.org/10.1038/s41565-021-01059-z10.1038/s41565-021-01059-z ↗
11. Cassabois G, Valvin P, Gil B (2016) Hexagonal boron nitride is an indirect bandgap semiconductor. Nat Photonics 10:262–266. https://doi.org/10.1038/nphoton.2015.27710.1038/nphoton.2015.277 ↗
12. Huang B, Cao XK, Jiang HX, Lin JY, Wei S-H (2012) Origin of the significantly enhanced optical transitions in layered boron nitride. PhRvB 86:155202. https://doi.org/10.1103/PhysRevB.86.15520210.1103/PhysRevB.86.155202 ↗
13. Schue L, Sponza L, Plaud A, Bensalah H, Watanabe K, Taniguchi T, Ducastelle F, Loiseau A, Barjon J (2019) Bright luminescence from indirect and strongly bound excitons in h-BN. Phys Rev Lett 122:067401. https://doi.org/10.1103/PhysRevLett.122.06740110.1103/PhysRevLett.122.067401 ↗
14. Ji Y, Pan C, Zhang M, Long S, Lian X, Miao F, Hui F, Shi Y, Larcher L, Wu E, Lanza M (2016) Boron nitride as two dimensional dielectric: reliability and dielectric breakdown. Appl Phys Lett 108:012905. https://doi.org/10.1063/1.493913110.1063/1.4939131 ↗
15. Viti L, Hu J, Coquillat D, Politano A, Consejo C, Knap W, Vitiello MS (2016) Heterostructured hBN-BP-hBN nanodetectors at terahertz frequencies. Adv Mater 28:7390–7396. https://doi.org/10.1002/adma.20160173610.1002/adma.201601736 ↗
16. Dahal R, Li J, Majety S, Pantha BN, Cao XK, Lin JY, Jiang HX (2011) Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material. Appl Phys Lett 98:211110. https://doi.org/10.1063/1.359395810.1063/1.3593958 ↗
17. Maity A, Doan TC, Li J, Lin JY, Jiang HX (2016) Realization of highly efficient hexagonal boron nitride neutron detectors. Appl Phys Lett 109:072101. https://doi.org/10.1063/1.496052210.1063/1.4960522 ↗
18. Doan TC, Li J, Lin JY, Jiang HX (2016) Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors. AIP Adv 6:075213. https://doi.org/10.1063/1.495959510.1063/1.4959595 ↗
19. Fröch JE, Hwang Y, Kim S, Aharonovich I, Toth M (2018) Photonic nanostructures from hexagonal boron nitride. Adv Opt Mater 7:1801344. https://doi.org/10.1002/adom.20180134410.1002/adom.201801344 ↗
20. Wang D, Meng J, Zhang X, Guo G, Yin Z, Liu H, Cheng L, Gao M, You J, Wang R (2018) Selective direct growth of atomic layered HfS2 on hexagonal boron nitride for high performance photodetectors. Chem Mater 30:3819–3826. https://doi.org/10.1021/acs.chemmater.8b0109110.1021/acs.chemmater.8b01091 ↗
21. Li J, Glaser ER, Elias C, Ye G, Evans D, Xue L, Liu S, Cassabois G, Gil B, Valvin P, Pelini T, Yeats AL, He R, Liu B, Edgar JH (2021) Defect engineering of monoisotopic hexagonal boron nitride crystals via neutron transmutation doping. Chem Mater 33:9231–9239. https://doi.org/10.1021/acs.chemmater.1c0284910.1021/acs.chemmater.1c02849 ↗
22. Watanabe K, Taniguchi T, Kanda H (2004) Ultraviolet luminescence spectra of boron nitride single crystals grown under high pressure and high temperature. Phys Status Solidi 201:2561–2565. https://doi.org/10.1002/pssa.20040518810.1002/pssa.200405188 ↗
23. Zhigadlo ND (2014) Crystal growth of hexagonal boron nitride (hBN) from Mg–B–N solvent system under high pressure. J Cryst Growth 402:308–311. https://doi.org/10.1016/j.jcrysgro.2014.06.03810.1016/j.jcrysgro.2014.06.038 ↗
24. Li J, Yuan C, Elias C, Wang J, Zhang X, Ye G, Huang C, Kuball M, Eda G, Redwing JM, He R, Cassabois G, Gil B, Valvin P, Pelini T, Liu B, Edgar JH (2020) Hexagonal boron nitride single crystal growth from solution with a temperature gradient. Chem Mater 32:5066–5072. https://doi.org/10.1021/acs.chemmater.0c0083010.1021/acs.chemmater.0c00830 ↗
25. Liu S, He R, Xue L, Li J, Liu B, Edgar JH (2018) Single crystal growth of millimeter-sized monoisotopic hexagonal boron nitride. Chem Mater 30:6222–6225. https://doi.org/10.1021/acs.chemmater.8b0258910.1021/acs.chemmater.8b02589 ↗
26. Zhang S-Y, Xu K, Zhao X-K, Shao Z-Y, Wan N (2019) Improved hBN single-crystal growth by adding carbon in the metal flux. Cryst Growth Des 19:6252–6257. https://doi.org/10.1021/acs.cgd.9b0071210.1021/acs.cgd.9b00712 ↗
27. Lee Y-C, Wang E-Y, Liu Y-L, Chen H-L (2015) Using metal-less structures to enhance the raman signals of graphene by 100-fold while maintaining the band-to-band ratio and peak positions precisely. Chem Mater 27:876–884. https://doi.org/10.1021/cm504003t10.1021/cm504003t ↗
28. Cuscó R, Gil B, Cassabois G, Artús L (2016) Temperature dependence of Raman-active phonons and anharmonic interactions in layered hexagonal BN. PhRvB 94:155435. https://doi.org/10.1103/PhysRevB.94.15543510.1103/PhysRevB.94.155435 ↗
29. Cao XK, Clubine B, Edgar JH, Lin JY, Jiang HX (2013) Two-dimensional excitons in three-dimensional hexagonal boron nitride. Appl Phys Lett 103:191106. https://doi.org/10.1063/1.482902610.1063/1.4829026 ↗
30. Bourrellier R, Meuret S, Tararan A, Stephan O, Kociak M, Tizei LH, Zobelli A (2016) Bright UV single photon emission at point defects in h-BN. Nano Lett 16:4317–4321. https://doi.org/10.1021/acs.nanolett.6b0136810.1021/acs.nanolett.6b01368 ↗
31. Koperski M, Vaclavkova D, Watanabe K, Taniguchi T, Novoselov KS, Potemski M (2020) Midgap radiative centers in carbon-enriched hexagonal boron nitride. Proc Natl Acad Sci U S A 117:13214–13219. https://doi.org/10.1073/pnas.200389511710.1073/pnas.2003895117 ↗
32. Mendelson N, Chugh D, Reimers JR, Cheng TS, Gottscholl A, Long H, Mellor CJ, Zettl A, Dyakonov V, Beton PH, Novikov SV, Jagadish C, Tan HH, Ford MJ, Toth M, Bradac C, Aharonovich I (2021) Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride. Nat Mater 20:321–328. https://doi.org/10.1038/s41563-020-00850-y10.1038/s41563-020-00850-y ↗
33. Taniguchi T, Watanabe K (2007) Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent. J Cryst Growth 303:525–529. https://doi.org/10.1016/j.jcrysgro.2006.12.06110.1016/j.jcrysgro.2006.12.061 ↗
34. Du XZ, Li J, Lin JY, Jiang HX (2015) The origin of deep-level impurity transitions in hexagonal boron nitride. Appl Phys Lett 106:021110. https://doi.org/10.1063/1.490590810.1063/1.4905908 ↗
35. Lee JS, Choi SH, Yun SJ, Kim YI, Boandoh S, Park JH, Shin BG, Ko H, Lee SH, Kim YM (2018) Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation. Science 362:817–821. https://doi.org/10.1126/science.aau213210.1126/science.aau2132 ↗
36. Museur L, Brasse G, Pierret A, Maine S, Attaltretout B, Ducastelle F, Loiseau A, Barjon J, Watanabe K, Taniguchi T, Kanaev A (2011) Exciton optical transitions in a hexagonal boron nitride single crystal. Phys Status Solidi RRL Rapid Res Lett 5:214–216. https://doi.org/10.1002/pssr.20110519010.1002/pssr.201105190 ↗
37. Watanabe K, Taniguchi T, Kuroda T, Kanda H (2006) Effects of deformation on band-edge luminescence of hexagonal boron nitride single crystals. Appl Phys Lett 89:141902. https://doi.org/10.1063/1.235831410.1063/1.2358314 ↗
38. Du XZ, Li J, Lin JY, Jiang HX (2016) The origins of near band-edge transitions in hexagonal boron nitride epilayers. Appl Phys Lett 108:052106. https://doi.org/10.1063/1.494154010.1063/1.4941540 ↗
39. Cassabois G, Valvin P, Gil B (2016) Intervalley scattering in hexagonal boron nitride. PhRvB 93:035207. https://doi.org/10.1103/PhysRevB.93.03520710.1103/PhysRevB.93.035207 ↗
40. Pelini T, Elias C, Page R, Xue L, Liu S, Li J, Edgar JH, Dréau A, Jacques V, Valvin P, Gil B, Cassabois G (2019) Shallow and deep levels in carbon-doped hexagonal boron nitride crystals. Phys Rev Mater 3:094001. https://doi.org/10.1103/PhysRevMaterials.3.09400110.1103/PhysRevMaterials.3.094001 ↗
41. Du XZ, Uddin MR, Li J, Lin JY, Jiang HX (2017) Layer number dependent optical properties of multilayer hexagonal BN epilayers. Appl Phys Lett 110:092102. https://doi.org/10.1063/1.497742510.1063/1.4977425 ↗
42. Onodera M, Taniguchi T, Watanabe K, Isayama M, Masubuchi S, Moriya R, Machida T (2020) Hexagonal boron nitride synthesized at atmospheric pressure using metal alloy solvents: evaluation as a substrate for 2D materials. Nano Lett 20:735–740. https://doi.org/10.1021/acs.nanolett.9b0464110.1021/acs.nanolett.9b04641 ↗
43. Gourdon P, Lavallard C (1989) Exciton transfer between localized states in CdS1-sex alloys. Phys Status Solidi 641:641–65210.1002/pssb.2221530222 ↗
44. Akasaka T, Gotoh H, Nakano H, Makimoto T (2005) Blue-purplish InGaN quantum wells with shallow depth of exciton localization. Appl Phys Lett 86:191902. https://doi.org/10.1063/1.192531410.1063/1.1925314 ↗