Phase Identification of 850 nm Thick 7%YO1.5–93%HfO2 Films by Surface and Cross-Sectional Raman Spectroscopies
Abstract
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Electronic and Structural Properties of Oxides
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Affiliations
Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
Department of Chemistry, Faculty of Science, Gakushuin University, Toshima-ku 171-8588, Japan
Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya, Aichi 456-8587, Japan
Research Center for Functional Materials, National Institute for Materials Science, 1-2-1, Sengen, Tsukuba-shi, Ibaraki 305-0047, Japan
Department of Physical Sciences, College of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Funding
Ministry of Education, Culture, Sports, Science and Technology · Japan Society for the Promotion of Science