Pores in p-type GaN by annealing under nitrogen atmosphere: formation and photodetector

Rongrong Chen; Jie Liu; Bo Feng; Hongyan Zhu; Di Wang; Caina Luan; Jin Ma; Lei Zhang; Hongdi Xiao

doi:10.1007/s10853-021-06632-4

journal article·2022-01

Pores in p-type GaN by annealing under nitrogen atmosphere: formation and photodetector

Rongrong Chen, Jie Liu, Bo Feng, Hongyan Zhu, Di Wang, Caina Luan, Jin Ma, Lei Zhang, Hongdi Xiao

Journal of Materials Science· Volume 57· Issue 1

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Materials processing

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

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References (44)

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