DataVXACS Applied Electronic MaterialsPaper
journal article·2022-01-25

High Driving Current Selector Based on As-Implanted HfO2 Thin Film for 3D Phase Change Memory

Ruobing Wang, Tianqi Guo, Dongning Yao, Sannian Song, Zhitang Song

ACS Applied Electronic Materials· Volume 4· Issue 1
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Source abstract

Abstract

A large crossbar array is desirable for high-density 3D stacking phase change memory (PCM) applications, in which the leakage current is mainly decided by selector devices. Meanwhile, a large driving current is also needed to meet the Reset operation of the PCM cell. Here, we propose a selector based on a nanoscale HfO2 film via As ion implantation, which has a low threshold voltage of 1.9 V, a milliamp-scale high driving current, a large selectivity of 106, fast turn on speed, and good endurance (108 switching cycles). These excellent performances make it applicable in the high-density stacked PCM application.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsBiomaterials

OpenAlex topics: Advanced Memory and Neural Computing · Phase-change materials and chalcogenides · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funding

Ministry of Science and Technology of the People's Republic of China · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China · Genetic Engineering of Precious Metal Materials in Yunnan Province (I)-Construction and Application of Precious Metal Materials Professional Database (I)

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