journal article·2020-11-24

Flux-Mediated Doping of Bi into (La,Sr)MnO3 Films Grown on NdGdO3 (110) Substrates

Koji Mizufune, Hiroshi Naganuma, Shingo Maruyama, Yuji Matsumoto

ACS Applied Electronic Materials· Volume 2· Issue 11
Publisher page

Abstract

Bi-doped (La,Sr)MnO3 [(Bi0.18La0.56Sr0.30) Mn0.96O3: BLSMO, tBLSMO = 63 nm] epitaxial films were grown on NaGdO3 (NGO) substrates by a flux-mediated doping approach. That is, the growth of a (La,Sr)MnO3 (LSMO) film under the coexistence of a Bi-based liquid flux leads to successful Bi doping into the LSMO film, though Bi is a highly volatile element. The composition analysis revealed that Sr preferentially existed in the film over the flux and that Sr has a larger distribution equilibrium coefficient (K) than those of Mn and La, which is one of the evidence that Bi has substituted for the La site. The obtained BLSMO films had a tetragonal distorted structure owing to a compressive strain from the NGO substrate, and the tetragonality and the crystallinity were enhanced by increasing the amount of Bi. The tetragonal distortion of the BLSMO films induced a perpendicular magnetic anisotropy. Both the Bi substitution at the La site and the ratio of Mn2+/Mn3+ increased from the film body to the surface, a magnetic moment was decreased to 0.6 μB/Mn. Although the magnetic moment was low, the Curie temperature of the BLSMO film was above room temperature (RT), and the magnetic entropy change |ΔSM| of 2.4 mJ/(cm3·K) was observed near RT. The BLSMO film is favored for magnetocaloric effect applications as well as spin-transfer-torque devices such as microwave oscillators.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Multiferroics and related materials · Advanced Condensed Matter Physics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan

Department of Applied Physics, Graduate School of Engineering, Tohoku University, 6-6-05 D08 Aoba Aramaki, Aoba-ku, Sendai, Miyagi980-8579, Japan

Center for Innovative Integrated Electronics Systems, Tohoku University, 468-1 Aoba Aramaki, Aoba-ku, Sendai, Miyagi 980-8572, Japan

Center for Spintronics Integrated Systems, Tohoku University, 2-2-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan

Center for Spintronics Research Network, Tohoku University, 2-2-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan

Funding

Murata Science Foundation · Japan Society for the Promotion of Science

References (42)

Show source-provided references
1. 10.1063/1.11865110.1063/1.118651 ↗
2. 10.1063/1.153461910.1063/1.1534619 ↗
3. 10.1143/JPSJ.67.258210.1143/JPSJ.67.2582 ↗
4. 10.1103/PhysRevB.66.09441010.1103/PhysRevB.66.094410 ↗
5. 10.1063/1.497843110.1063/1.4978431 ↗
6. 10.1038/s41598-017-09125-010.1038/s41598-017-09125-0 ↗
7. 10.1021/acsami.8b0308810.1021/acsami.8b03088 ↗
8. 10.1088/0022-3727/49/7/07530410.1088/0022-3727/49/7/075304 ↗
9. 10.1088/1361-648X/aac46810.1088/1361-648X/aac468 ↗
10. 10.1038/s41598-019-42998-x10.1038/s41598-019-42998-x ↗
11. 10.1007/s00339-019-2620-y10.1007/s00339-019-2620-y ↗
12. 10.1016/j.tsf.2012.04.06410.1016/j.tsf.2012.04.064 ↗
13. 10.1016/j.matchar.2016.05.00210.1016/j.matchar.2016.05.002 ↗
14. 10.1038/nmat457910.1038/nmat4579 ↗
15. 10.1063/1.160964710.1063/1.1609647 ↗
16. 10.1063/1.155696710.1063/1.1556967 ↗
17. 10.1016/j.jmmm.2019.16602010.1016/j.jmmm.2019.166020 ↗
18. 10.1016/j.jallcom.2010.01.08910.1016/j.jallcom.2010.01.089 ↗
19. 10.1016/j.jmmm.2006.02.08210.1016/j.jmmm.2006.02.082 ↗
20. 10.1016/j.physb.2011.01.02310.1016/j.physb.2011.01.023 ↗
21. 10.1016/j.jallcom.2014.08.00510.1016/j.jallcom.2014.08.005 ↗
22. 10.1016/j.jmmm.2014.07.03710.1016/j.jmmm.2014.07.037 ↗
23. 10.1016/j.physb.2004.11.08410.1016/j.physb.2004.11.084 ↗
24. 10.1063/1.487622210.1063/1.4876222 ↗
25. 10.1016/j.jmmm.2006.02.08210.1016/j.jmmm.2006.02.082 ↗
26. 10.1016/S0304-8853(99)00397-210.1016/S0304-8853(99)00397-2 ↗
27. 10.1016/S0921-5107(99)00051-310.1016/S0921-5107(99)00051-3 ↗
28. 10.1016/j.jcrysgro.2004.10.09110.1016/j.jcrysgro.2004.10.091 ↗
29. 10.1002/adfm.20050039010.1002/adfm.200500390 ↗
30. 10.1063/1.243312310.1063/1.2433123 ↗
31. 10.1107/S056773947600155110.1107/S0567739476001551 ↗
32. 10.1103/PhysRevB.53.1428510.1103/PhysRevB.53.14285 ↗
33. 10.1063/1.144548310.1063/1.1445483 ↗
34. 10.1143/JJAP.40.L21910.1143/JJAP.40.L219 ↗
35. 10.1039/C7CE00945C10.1039/C7CE00945C ↗
36. 10.1038/nmat190510.1038/nmat1905 ↗
37. 10.1063/1.346319310.1063/1.3463193 ↗
38. 10.1016/j.apsusc.2015.06.05110.1016/j.apsusc.2015.06.051 ↗
39. 10.1038/s41598-019-44104-710.1038/s41598-019-44104-7 ↗
40. 10.1038/s41535-018-0077-410.1038/s41535-018-0077-4 ↗
41. 10.1103/PhysRevB.71.01443410.1103/PhysRevB.71.014434 ↗
42. 10.1103/PhysRevLett.70.69410.1103/PhysRevLett.70.694 ↗