Role of In in Hydrogenation of N-Related Complexes in GaInNAs
Source abstract
Abstract
The N-related isoelectronic centers in dilute nitrides act as localized states inside the band gap. Here, hydrogenation is shown to reduce the number of defect levels. However, some residual defects persist, and their nature remains relatively unexplored. Using density functional total energy calculations, we show that the N–In complex may cause some of the residual defect levels evident in these materials. Moreover, these N–In effects can be neutralized through hydrogenation in a similar manner to that of the N–Ga complex. The calculated formation energies suggest the inherent stability of the N–In defect complexes and In-rich alloy fluctuations in dilute nitrides.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Chemical, Biological and Materials Engineering, University of Oklahoma, Norman, Oklahoma 73019, United States
Homer L. Dodge Department of Physics & Astronomy, University of Oklahoma, Norman, Oklahoma 73019, United States
Amethyst Research Inc., 123 Case Circle, Ardmore, Oklahoma 73401, United States
CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France
Funding
National Aeronautics and Space Administration
References (30)
Show source-provided references
1. 10.1038/nenergy.2017.14410.1038/nenergy.2017.144 ↗
2. 10.1063/1.273450710.1063/1.2734507 ↗
3. 10.1002/pip.247510.1002/pip.2475 ↗
4. 10.1002/pip.108810.1002/pip.1088 ↗
5. Kurtz, S. R.; Myers, D.; Olson, J. M. Projected performance of three-and four-junction devices using GaAs and GaInP. In Conference Record of the Twenty-Sixth IEEE Photovoltaic Specialists Conference 1997; IEEE, 1997; pp 875–878.
6. 10.1088/0268-1242/24/3/03300110.1088/0268-1242/24/3/033001 ↗
7. 10.1063/1.134581910.1063/1.1345819 ↗
8. 10.1063/1.12471110.1063/1.124711 ↗
9. 10.1103/PhysRevB.97.07520110.1103/PhysRevB.97.075201 ↗
10. 10.1016/j.solmat.2016.01.02410.1016/j.solmat.2016.01.024 ↗
11. 10.1016/j.solmat.2014.01.04410.1016/j.solmat.2014.01.044 ↗
12. 10.1143/JJAP.31.L85310.1143/JJAP.31.L853 ↗
13. 10.1103/PhysRevApplied.7.06401110.1103/PhysRevApplied.7.064011 ↗
14. 10.1103/PhysRevB.63.20130410.1103/PhysRevB.63.201304 ↗
15. 10.1103/PhysRevLett.98.20640310.1103/PhysRevLett.98.206403 ↗
16. 10.1103/PhysRevLett.89.08640310.1103/PhysRevLett.89.086403 ↗
17. 10.1063/1.491666810.1063/1.4916668 ↗
18. 10.1103/PhysRevB.65.23521010.1103/PhysRevB.65.235210 ↗
19. 10.1088/0268-1242/17/8/30810.1088/0268-1242/17/8/308 ↗
20. 10.1039/C7RA02900D10.1039/C7RA02900D ↗
21. 10.1109/PVSC.2015.735601310.1109/PVSC.2015.7356013 ↗
22. 10.1063/1.163951010.1063/1.1639510 ↗
23. 10.1016/j.jcrysgro.2004.12.05710.1016/j.jcrysgro.2004.12.057 ↗
24. 10.1063/1.135415310.1063/1.1354153 ↗
25. 10.1103/PhysRevB.84.04530210.1103/PhysRevB.84.045302 ↗
26. 10.1103/PhysRevB.88.12520110.1103/PhysRevB.88.125201 ↗
27. 10.1063/1.369545710.1063/1.3695457 ↗
28. 10.1088/0268-1242/17/8/31510.1088/0268-1242/17/8/315 ↗
29. 10.1016/0031-8914(67)90062-610.1016/0031-8914(67)90062-6 ↗
30. 10.1016/j.jcrysgro.2004.12.05010.1016/j.jcrysgro.2004.12.050 ↗