Uniformity Improvement of Ti/ZrO2/Pt RRAM by Analyzing and Reducing Current Overshoot
Source abstract
Abstract
Current overshoot in resistive random access memory (RRAM) can affect the stability and increase the power consumption of devices, which has become a great challenge in RRAM applications. In this study, we analyzed current overshoot in Ti/ZrO 2 /Pt devices and proposed a solution to improve device stability through high-temperature forming. The analysis results indicate that current overshoot is likely to occur in the RESET process when the SET voltage is too high, and temperature has an important impact on the conversion voltage of the Ti/ZrO 2 /Pt devices. Moreover, we established an electrothermal coupling model of the devices based on the oxygen vacancy conduction mechanism by COMSOL, which could obtain the distribution of the oxygen vacancy concentration in the dielectric layer during resistance conversion at different temperatures and electric fields. Based on the above analysis, by forming at high temperature, the overshoot current is reduced, and the stability of the switching voltage is improved successfully.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
The School of Information Science and Technology, Northwest University, Xi’an 710127, People’s Republic of China
Key Laboratory for Wide-Bandgap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China
Funding
National Natural Science Foundation of China
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