Anisotropic correlation between the piezoelectricity and anion-polarizability difference in 2D phosphorene-type ternary GaXY (X = Se, Te; Y = F, Cl, Br, I) monolayers
Source abstract
Abstract
Inspired by the typical two-dimensional (2D) black-phosphorene-type structure with mm2 point-group symmetry, the structural stability, electronic structure, and intrinsic piezoelectricity of 2D ternary GaXY (X = Se and Te; Y = Cl, Br, and I) monolayers are systematically studied by the first-principles density functional theory. Our calculations show that these ternary monolayer compounds exhibit desirable dynamical and thermal stabilities and a large variety of bandgaps. The calculated piezoelectric coefficients d11 is as large as 15.57 pm/V for GaTeF, and the largest d12 reaches to 3.78 pm/V for GaSeI. It is worth noting that the eij and dij coefficients of GaXY monolayers display anisotropic periodic trends with respect to the constituent elements, which could be interpreted by a linear correlation between the piezoelectric coefficients and the differences in anionic polarizabilities $$\alphaX \;{\text{or}}\;\alphaY$$ . It is found that d11 of GaXY monolayers is directly proportional to $$(\alphaX - \alphaY )$$ , while d12 is inversely proportional to $$(\alphaX - \alphaY )$$ . Such anisotropic correlation could be applicable to elucidate the origin of the piezoelectricity in other 2D ternary compounds.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Advanced Thermoelectric Materials and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (54)
Show source-provided references
1. Wang Z-X, Zhang H, Wang F, Cheng H, He W-H, Liu Y-H, Huang X-Q, Li P-F (2020) Superior transverse piezoelectricity in a halide perovskite molecular ferroelectric thin film. J Am Chem Soc 142:12857–1286410.1021/jacs.0c06064 ↗
2. Yan SC, Li ZS, Zou ZG (2009) Photodegradation performance of g-C3N4 fabricated by directly heating melamine. Langmuir 25:10397–1040110.1021/la900923z ↗
3. Zhuang HL, Hennig RG (2013) Theoretical perspective of photocatalytic properties of single-layer SnS2. Phys Rev B 88:11531410.1103/PhysRevB.88.115314 ↗
4. Park H, Wadehra A, Wilkins JW, Castro Neto AH (2012) Magnetic states and optical properties of single-layer carbon-doped hexagonal boron nitride. Appl Phys Lett 100:25311510.1063/1.4730392 ↗
5. Ghasemian MB, Daeneke T, Shahrbabaki Z, Yang J, Kalantar-Zadeh K (2020) Peculiar piezoelectricity of atomically thin planar structures. Nanoscale 12:2875–290110.1039/C9NR08063E ↗
6. Yin H, Liu C, Zheng G-P, Wang Y, Ren F (2019) Ab initio simulation studies on the room-temperature ferroelectricity in two-dimensional β-phase GeS. Appl Phys Lett 114:19290310.1063/1.5097425 ↗
7. Niu X, Yi Y, Bai X, Zhang J, Zhou Z, Chu L, Yang J, Li XA (2019) Photocatalytic performance of few-layer graphitic C3N4: enhanced by interlayer coupling. Nanoscale 11:4101–410710.1039/C8NR10142F ↗
8. Ma W, Lu J, Wan B, Peng D, Xu Q, Hu G, Peng Y, Pan C, Wang ZL (2020) Piezoelectricity in multilayer black phosphorus for piezotronics and nanogenerators. Adv Mater 32:190579510.1002/adma.201905795 ↗
9. Ahammed R, Jena N, Rawat A, Mohanta MK, Dimple, De Sarkar A (2020) Ultrahigh out-of-plane piezoelectricity meets Giant Rashba effect in 2D janus monolayers and bilayers of group IV transition-metal trichalcogenides. J Phys Chem C 124:21250–2126010.1021/acs.jpcc.0c05134 ↗
10. Duerloo K-AN, Ong MT, Reed EJ (2012) Intrinsic piezoelectricity in two-dimensional materials. J Phys Chem Lett 3:2871–287610.1021/jz3012436 ↗
11. Wu W, Wang L, Li Y, Zhang F, Lin L, Niu S, Chenet D, Zhang X, Hao Y, Heinz TF, Hone J, Wang ZL (2014) Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics. Nature 514:470–47410.1038/nature13792 ↗
12. Zhu H, Wang Y, Xiao J, Liu M, Xiong S, Wong ZJ, Ye Z, Ye Y, Yin X, Zhang X (2015) Observation of piezoelectricity in free-standing monolayer MoS2. Nat Nanotechnol 10:151–15510.1038/nnano.2014.309 ↗
13. Zhou Y, Wu D, Zhu Y, Cho Y, He Q, Yang X, Herrera K, Chu Z, Han Y, Downer MC, Peng H, Lai K (2017) Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett 17:5508–551310.1021/acs.nanolett.7b02198 ↗
14. Ong MT, Reed EJ (2012) Engineered piezoelectricity in graphene. ACS Nano 6:1387–139410.1021/nn204198g ↗
15. Ong MT, Duerloo K-AN, Reed EJ (2013) The effect of hydrogen and fluorine coadsorption on the piezoelectric properties of graphene. J Phys Chem C 117:3615–362010.1021/jp3112759 ↗
16. Hinchet R, Khan U, Falconi C, Kim S-W (2018) Piezoelectric properties in two-dimensional materials: simulations and experiments. Mater Today 21:611–63010.1016/j.mattod.2018.01.031 ↗
17. Yin H, Gao J, Zheng G-P, Wang Y, Ma Y (2017) Giant piezoelectric effects in monolayer group-V binary compounds with honeycomb phases: a first-principles prediction. J Phys Chem C 121:25576–2558410.1021/acs.jpcc.7b08822 ↗
18. Blonsky MN, Zhuang HL, Singh AK, Hennig RG (2015) Ab initio prediction of piezoelectricity in two-dimensional materials. ACS Nano 9:9885–989110.1021/acsnano.5b03394 ↗
19. Jiang S, Yin H, Li J, Liu L, Shi X, Yan Y, Liu C, Zheng G-P, Liu P-F (2020) Multidirectional intrinsic piezoelectricity of 2D metal chalcogen-diphosphate ABP2X6 monolayers. Phys Status Solidi (RRL)-R 14:200032110.1002/pssr.202000321 ↗
20. Yin H, Zheng G-P, Wang Y, Yao B (2018) New monolayer ternary In-containing sesquichalcogenides BiInSe3, SbInSe3, BiInTe3, and SbInTe3 with high stability and extraordinary piezoelectric properties. Phys Chem Chem Phys 20:19177–1918710.1039/C8CP02793E ↗
21. Xu Y, Li Z, He C, Li J, Ouyang T, Zhang C, Tang C, Zhong J (2020) Intrinsic piezoelectricity of monolayer group IV–V MX2: SiP2, SiAs2, GeP2, and GeAs2. Appl Phys Lett 116:02310310.1063/1.5135950 ↗
22. Sevik C, Çakır D, Gülseren O, Peeters FM (2016) Peculiar piezoelectric properties of soft two-dimensional materials. J Phys Chem C 120:13948–1395310.1021/acs.jpcc.6b03543 ↗
23. Wu W, Jiao Y, Li S, Sheng X-L, Yu Z-M, Yang SA (2019) Hourglass Weyl loops in two dimensions: theory and material realization in monolayer GaTeI family. Phys Rev Mater 3:05420310.1103/PhysRevMaterials.3.054203 ↗
24. Zhou W, Guo S, Zhang S, Zhu Z, Song X, Niu T, Zhang K, Liu X, Zou Y, Zeng H (2018) DFT coupled with NEGF study of a promising two-dimensional channel material: black phosphorene-type GaTeCl. Nanoscale 10:3350–335510.1039/C7NR08252E ↗
25. Fei R, Li W, Li J, Yang L (2015) Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS. Appl Phys Lett 107:17310410.1063/1.4934750 ↗
26. Kresse G, Furthmüller J (1996) Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B 54:11169–1118610.1103/PhysRevB.54.11169 ↗
27. Kresse G, Furthmüller J (1996) Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput Mater Sci 6:15–5010.1016/0927-0256(96)00008-0 ↗
28. Kresse G, Joubert D (1999) From ultrasoft pseudopotentials to the projector augmented-wave method. Phys Rev B 59:1758–177510.1103/PhysRevB.59.1758 ↗
29. Blöchl PE (1994) Projector augmented-wave method. Phys Rev B 50:17953–1797910.1103/PhysRevB.50.17953 ↗
30. Perdew JP, Burke K, Ernzerhof M (1996) Generalized gradient approximation made simple. Phys Rev Lett 77:3865–386810.1103/PhysRevLett.77.3865 ↗
31. Monkhorst HJ, Pack JD (1976) Special points for Brillouin-zone integrations. Phys Rev B 13:5188–519210.1103/PhysRevB.13.5188 ↗
32. Heyd J, Scuseria GE, Ernzerhof M (2003) Hybrid functionals based on a screened Coulomb potential. J Chem Phys 118:8207–821510.1063/1.1564060 ↗
33. Togo A, Oba F, Tanaka I (2008) First-principles calculations of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at high pressures. Phys Rev B 78:13410610.1103/PhysRevB.78.134106 ↗
34. Bucher D, Pierce LCT, McCammon JA, Markwick PRL (2011) On the use of accelerated molecular dynamics to enhance configurational sampling in ab initio simulations. J Chem Theory Comput 7:890–89710.1021/ct100605v ↗
35. Nosé S (1984) A unified formulation of the constant temperature molecular dynamics methods. J Chem Phys 81:511–51910.1063/1.447334 ↗
36. Axel W, Rüdiger K (1981) NOTIZEN: GaTeCl—Eine Tetraederschichtstruktur mit Ga−Te-Verknüpfung vom Typ des schwarzen Phosphors/GaTeCl—a tetrahedral layer structure with Ga–Te linking of the black phosphorus type. Z Naturforsch B 36:1658–165910.1515/znb-1981-1230 ↗
37. Kniep R, Wilms A, Beister HJ (1983) Phase relations in Ga2X3-GaY3 systems (X=Se, Te; Y=Cl, Br, I)—crystal growth, structural relations and optical absorption of intermediate compounds GaXY. Mater Res Bull 18:615–62010.1016/0025-5408(83)90220-9 ↗
38. Zhang S-H, Liu B-G (2018) A controllable robust multiferroic GaTeCl monolayer with colossal 2D ferroelectricity and desirable multifunctionality. Nanoscale 10:5990–599610.1039/C7NR09588K ↗
39. Haastrup S, Strange M, Pandey M, Deilmann T, Schmidt PS, Hinsche NF, Gjerding MN, Torelli D, Larsen PM, Riis-Jensen AC, Gath J, Jacobsen KW, Jørgen Mortensen J, Olsen T, Thygesen KS (2018) The computational 2D materials database: high-throughput modeling and discovery of atomically thin crystals. 2D Mater 5:04200210.1088/2053-1583/aacfc1 ↗
40. Saal JE, Kirklin S, Aykol M, Meredig B, Wolverton C (2013) Materials design and discovery with high-throughput density functional theory: the open quantum materials database (OQMD). JOM 65:1501–150910.1007/s11837-013-0755-4 ↗
41. Zhang S, Yan Z, Li Y, Chen Z, Zeng H (2015) Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions. Angew Chem Int Ed 54:3112–311510.1002/anie.201411246 ↗
42. Jiang S, Li J, Chen W, Yin H, Zheng G-P, Wang Y (2020) InTeI: a novel wide-bandgap 2D material with desirable stability and highly anisotropic carrier mobility. Nanoscale 12:5888–589710.1039/C9NR10619G ↗
43. Damjanovic D (1998) Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics. Rep Prog Phys 61:1267–132410.1088/0034-4885/61/9/002 ↗
44. King-Smith RD, Vanderbilt D (1993) Theory of polarization of crystalline solids. Phys Rev B 47:1651–165410.1103/PhysRevB.47.1651 ↗
45. Vanderbilt D (2000) Berry-phase theory of proper piezoelectric response. J Phys Chem Solids 61:147–15110.1016/S0022-3697(99)00273-5 ↗
46. Nye JF (1985) Physical properties of crystals: their representation by tensors and matrices. Oxford University Press, Oxford
47. Li W, Li J (2015) Piezoelectricity in two-dimensional group-III monochalcogenides. Nano Res 8:3796–380210.1007/s12274-015-0878-8 ↗
48. Mouhat F, Coudert F-X (2014) Necessary and sufficient elastic stability conditions in various crystal systems. Phys Rev B 90:22410410.1103/PhysRevB.90.224104 ↗
49. Alyörük MM, Aierken Y, Çakır D, Peeters FM, Sevik C (2015) Promising piezoelectric performance of single layer transition-metal dichalcogenides and dioxides. J Phys Chem C 119:23231–2323710.1021/acs.jpcc.5b06428 ↗
50. Guo S-D, Guo X-S, Liu Z-Y, Quan Y-N (2020) Large piezoelectric coefficients combined with high electron mobilities in Janus monolayer XTeI (X = Sb and Bi): a first-principles study. J Appl Phys 127:06430210.1063/1.5134960 ↗
51. Yin H, Zheng G-P, Gao J, Wang Y, Ma Y (2017) Enhanced piezoelectricity of monolayer phosphorene oxides: a theoretical study. Phys Chem Chem Phys 19:27508–2751510.1039/C7CP05669A ↗
52. Alyörük MM (2016) Piezoelectric properties of monolayer II–VI group oxides by first-principles calculations. Phys Status Solidi B 253:2534–253910.1002/pssb.201600387 ↗
53. Shi J, Han C, Wang X, Yun S (2019) Electronic, elastic and piezoelectric properties of boron-V group binary and ternary monolayers. Phys B 574:31163410.1016/j.physb.2019.08.011 ↗
54. Schwerdtfeger P, Nagle JK (2018) Table of static dipole polarizabilities of the neutral elements in the periodic table. Mol Phys 117(2019):1200–1225