journal article·2011-09

Microstructure evolution of gold thin films under spherical indentation for micro switch contact applications

Brice Arrazat, Vincent Mandrillon, Karim Inal, Maxime Vincent, Christophe Poulain

Journal of Materials Science· Volume 46· Issue 18
Publisher page

Abstract

RF MEMS (Radio Frequency Micro Electro Mechanical System) switches are promising devices but their gold-on-gold contacts, assimilated for this study to a sphere/plane contact, represent a major reliability issue. A first step toward understanding failure mechanisms is to investigate the contact metal microstructure evolution under static and cyclic loading. After static and cyclic loading of sputtered gold thin films under spherical indentation, high-resolution Electron Back Scatter Diffraction (EBSD) is used to investigate the contact area. Grain rotation against {111} fiber texture of 1-μm-thick sputtered gold thin film is a signature of plastic deformation. Grain rotation is observed above 1.6 mN under static loading using a spherical diamond indenter with 50-μm tip radius. The heterogeneity in grain rotation observed corresponds to a greater plastic deformation in the middle of the indent than at the edge. A 30° grain rotation due to cyclic work hardening is observed for a half-million mechanical cycles under 300 μN load using a spherical gold tip (20 μm radius). The same test in hot switching mode induces a grain growth in the contact area. Therefore, thermal effects occurring during hot switching are underlined.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Metal and Thin Film Mechanics · Force Microscopy Techniques and Applications · Advanced Surface Polishing Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (15)

Show source-provided references
1. Rebeiz GM, Muldavin JB (2001) IEEE Microwave Mag 2(4):5910.1109/6668.969936 ↗
2. Coutu RA, Kladitis PE, Starman LA, Reid JR (2004) Sensors Actuators A 115(2–3):25210.1016/j.sna.2004.03.019 ↗
3. Coutu RA, Reid JR, Cortez R, Strawser RE, Kladitis PE (2006) IEEE Trans Compon Packag Technol 29(2):34110.1109/TCAPT.2006.875898 ↗
4. Chen L, Lee H, Guo ZJ, McGruer NE, Gilbert KW, Mall S, Leedy KD, Adams GG (2007) J Appl Phys 102(7):07491010.1063/1.2785951 ↗
5. Yan X, McGruer NE, Adams GG, Majumder S (2003) In: 12th International conference on transducers, solid-state sensors, actuators and microsystems, Boston
6. Chen L, Guo ZJ, Du Y, McGruer NE, Adams GG (2006) IEEE Microwave Mag
7. Gregori G, Clarke DR (2006) J Appl Phys 100(9):09490410.1063/1.2363745 ↗
8. Duvivier PY, Mandrillon V, Inal K, Dieppedale C, Deldon-Martoscia S, Polizzi J (2010) In: 2010 Proceedings of the 56th IEEE Holm conference on electrical contacts, Minneapolis
9. Humphreys FJ (2001) J Mater Sci 36(16):3833. doi: https://doi.org/10.1023/A:101797343259210.1023/A:1017973432592 ↗
10. Pharr GM, Strader JH, Oliver WC (2009) J Mater Res 24(3):65310.1557/jmr.2009.0096 ↗
11. Vincent M, Chiesi L, Rousset P, Lapiere C, Poulain C, Carbone L, Houze F, Delamare J (2009) In: 2009 Proceedings of the 55th IEEE Holm Conference on electrical contacts, Vancouver
12. Fischer-Cripps AC (2004) In: Nanoindentation, Springer-verlag, New York10.1007/978-1-4757-5943-3 ↗
13. Pharr GM, Taljat B (2004) Int J Solids Struct 41:389110.1016/j.ijsolstr.2004.02.033 ↗
14. Kalidindi SR, Bronkhorst CA, Anand L (1992) Phil Trans R Soc Lond 341:44310.1098/rsta.1992.0111 ↗
15. Cao Y, Allameh S, Nankivil D, Sethiaraj S, Otiti T, Soboyejo W (2006) Mater Sci Eng A 427(1–2):23210.1016/j.msea.2006.04.080 ↗