journal article·2019-06-25

Strain-Controlled Giant Magnetoresistance in Spin Valves Grown on Shape Memory Alloys

Mengxi Wang, Xiaoguang Xu, Shijie Hao, Feng Yang, Libai Zhu, Yong Wu, Kangkang Meng, Jikun Chen, Jun Miao, Yong Jiang

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Abstract

We report a strain-mediated giant magnetoresistance (GMR) in spin valves (SPVs) grown on shape memory alloys (SMAs). The SPVs with a stacking structure of Al2O3/Co90Fe10/Cu/Co90Fe10/IrMn/Pt were deposited on NiTi and NiTiNb SMA substrates with and without predeformation. The GMR of the SPVs on the precompressed NiTi substrates changes after annealing, whereas the one on SMAs without predeformation remains unchanged under the same annealing treatment. Especially, the GMR of the SPVs on the NiTiNb substrates can be reversibly modulated under a thermocycling treatment on account of the shape memory effect caused by the phase transitions of NiTiNb. The study demonstrates a new strain-mediated approach to reversibly control GMR through phase transitions, which provides a potential way to design strain-sensitive spintronic devices.
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Research context

OpenAlex topics: Shape Memory Alloy Transformations · Advanced Memory and Neural Computing · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

Department of Material Science and Engineering, China University of Petroleum-Beijing, Beijing 102249, China

Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany

Funding

Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China

References (36)

Show source-provided references
1. 10.1002/adma.20180361210.1002/adma.201803612 ↗
2. 10.1021/acsnano.7b0154710.1021/acsnano.7b01547 ↗
3. 10.1103/PhysRevLett.108.13720310.1103/PhysRevLett.108.137203 ↗
4. 10.1021/nl201965r10.1021/nl201965r ↗
5. 10.1021/nn303198w10.1021/nn303198w ↗
6. 10.1038/srep0650510.1038/srep06505 ↗
7. 10.1063/1.490777510.1063/1.4907775 ↗
8. 10.1063/1.473878710.1063/1.4738787 ↗
9. 10.1063/1.489408210.1063/1.4894082 ↗
10. 10.1063/1.491656910.1063/1.4916569 ↗
11. 10.1039/C6RA17910J10.1039/C6RA17910J ↗
12. 10.1007/s10832-012-9742-310.1007/s10832-012-9742-3 ↗
13. 10.1016/j.actamat.2014.06.00510.1016/j.actamat.2014.06.005 ↗
14. Buehler W. J. · Appl. Phys. · 1963 · 18 · 1
15. 10.1016/0927-0256(95)00003-910.1016/0927-0256(95)00003-9 ↗
16. 10.1016/j.pmatsci.2004.10.00110.1016/j.pmatsci.2004.10.001 ↗
17. 10.1126/science.122860210.1126/science.1228602 ↗
18. 10.1021/acsami.5b1269910.1021/acsami.5b12699 ↗
19. 10.1038/srep2019910.1038/srep20199 ↗
20. 10.1002/adfm.20180333510.1002/adfm.201803335 ↗
21. 10.1021/acsami.8b0376110.1021/acsami.8b03761 ↗
22. 10.1063/1.477557410.1063/1.4775574 ↗
23. 10.1038/ncomms238610.1038/ncomms2386 ↗
24. 10.1063/1.10759110.1063/1.107591 ↗
25. 10.1103/PhysRevLett.63.66410.1103/PhysRevLett.63.664 ↗
26. 10.1103/PhysRevB.56.607910.1103/PhysRevB.56.6079 ↗
27. 10.1007/s10051005076310.1007/s100510050763 ↗
28. 10.1103/PhysRevLett.21.119010.1103/PhysRevLett.21.1190 ↗
29. 10.1109/TMAG.1991.118375010.1109/TMAG.1991.1183750 ↗
30. 10.7567/APEX.7.04300210.7567/APEX.7.043002 ↗
31. 10.1063/1.156273210.1063/1.1562732 ↗
32. 10.1063/1.35688810.1063/1.356888 ↗
33. 10.1143/JJAP.19.109310.1143/JJAP.19.1093 ↗
34. 10.1109/TMAG.1987.106544310.1109/TMAG.1987.1065443 ↗
35. 10.1103/PhysRevB.35.367910.1103/PhysRevB.35.3679 ↗
36. 10.1002/adfm.20100248510.1002/adfm.201002485 ↗