Structural, optical, and electrical characteristics of 70 Mev Si5+ ion irradiation-induced nanoclusters of gallium nitride
Source abstract
Abstract
We report the formation of nanoclusters on the surface of gallium nitride (GaN) epilayers due to irradiation with 70 MeV Si ions with the fluences of 1 × 1012 ions/cm2 at the liquid nitrogen temperature (77 K). GaN epilayers were grown using a metal organic chemical vapor deposition system. Omega scan rocking curves of (002) and (101) plane reflection shows irradiation-induced broadening. Atomic force microscopy imagery revealed the formation of nanoclusters on the surface of the irradiated samples. X-ray photoelectron spectroscopy confirms that the surface features are composed of GaN. The effects of ion-beam-produced lattice defects on the surface, electrical, and optical properties of GaN were studied and possible mechanisms responsible for the formation of nanoclusters during irradiation have been discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ion-surface interactions and analysis · Boron and Carbon Nanomaterials Research
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