journal article·2018-03Open access

PbS x Se1−x thin films from the thermal decomposition of lead(II) dodecylxanthate and bis(N,N-diethyl-N′-naphthoylselenoureato)lead(II) precursors

Selina A. Saah, Paul D. McNaughter, Mohammed A. Malik, Johannes A. M. Awudza, Neerish Revaprasadu, Paul O’Brien

Journal of Materials Science· Volume 53· Issue 6

Abstract

Thin films of PbSxSe(1−x) (0 ≤ x ≤ 1) have been deposited by spin coating of bis(dodecylxanthato)lead(II) (1) and/or bis(N,N-diethyl-N′-naphthoylselenoureato)lead(II) (2) complexes onto glass substrates followed by heating. The mole fraction of the selenium precursor in the coating mixture was varied from 0 to 1 by mixing the S and Se precursors. The as-prepared thin films were then heated at temperatures ranging from 250 to 400 °C. Powder X-ray diffraction showed all films were of the halite structure with preferred orientation along (200) plane. The PbS films showed a closely packed network of nanorods, each comprised of smaller nanoparticles. The nanorods were about 500 nm in length and 25 nm in width; the adhered particles had ca. 30 nm sides. The PbSe nanoparticles were also cubic. The alloys showed an intermediate morphology between the rods and cubes depending on the precursor ratio in the coating mixture. The band gaps estimated from Tauc plots for the films heated at 250 °C for 30 min were 1.03 and 0.79 eV for PbS and PbSe, respectively. The alloyed PbSxSe(1−x) thin films exhibited band gaps between those of PbS and PbSe. The band gaps and lattice parameters of the alloys varied in a Vegardian manner and could be closely correlated with the composition of the precursor mixture.
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Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Spectroscopy and Quantum Chemical Studies

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