The influence of diluent gas composition and temperature on SiC nanopowder formation by CVD
Source abstract
Abstract
Crystalline cubic silicon carbide (3C-SiC) nanopowders were synthesized using hexamethyldisilane (HMDS) in a resistance heated chemical vapour deposition (CVD) reactor. The effects of different diluent gases on the synthesis of the SiC powder were also studied. The deposited powder was characterized using high-resolution X-ray diffraction (HRXRD) analysis, transmission electron microscopy (TEM), high-resolution TEM (HRTEM) and BET surface area measurements. The crystallite size was estimated to be in the range of nanometer (10–20 nm) from XRD data and the particle size (∼10–30 nm) was obtained by TEM, HRTEM and BET. The growth condition was optimized in terms of crystallinity, chemical composition and deposition rate by varying different parameters such as the diluent gas (H2/Ar ratio) and temperature.
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Research context
OpenAlex topics: ZnO doping and properties · Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices
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References (12)
Show source-provided references
1. Winterer M (2002) Nanocrystalline ceramics: synthesis and structure. Springer-Verlag, Heidelberg10.1007/978-3-662-04976-1 ↗
2. Klein DL, Roth R, Lim AK, Alivisatos AP, Mceuen PL (1997) Nature 389:69910.1038/39535 ↗
3. Artemyev MV, Sperling V, Woggon U (1997) J Appl Phys 82:697510.1063/1.365261 ↗
4. Davis RF, Palmour JW, Edmond JA (1990) IEDM 90:7851
5. Huang JS, Ohland M, Williams WS (1992) J Am Ceram Soc 75:262310.1111/j.1151-2916.1992.tb05627.x ↗
6. Kim H-S, Choi D-J (1999) J Am Ceram Soc 82(2):33110.1111/j.1551-2916.1999.tb20066.x ↗
7. Kassiba A, Janusik MM, Boucle J, Bardeau JF, Bulou A, Herlin N, Mayne M, Armand X (2002) Diamond Relat Mater 11:124310.1016/S0925-9635(02)00016-X ↗
8. Gupta A, Jacob C (2006) Mater Sci Forum (Silicon Carbide Relat Mater) 527–529:76710.4028/www.scientific.net/MSF.527-529.767 ↗
9. Thomas G, Goringe MJ (1981) Transmission electron microscopy of materials. Wiley, New York, p 110
10. Wang X-H, Eguchi K, Iwamoto C, Yoshida T (2002) Sci Technol Adv Mater 3:31310.1016/S1468-6996(02)00041-4 ↗
11. Park H-S, Seon H-S, Rhee S-W, Lee K-H, Baik S (1991) J Mater Sci 26:595710.1007/BF01130141 ↗
12. Takahashi K, Nishino S, Saraie J (1992) J Electrochem Soc 139(12):356510.1149/1.2069122 ↗