journal article·2021-02-23

Controlling Interfacial Exchanges in Liquid Phase Bonding Enables Formation of Strong and Reliable Cu–Sn Soldering for High-Power and Temperature Applications

Jean-François Silvain, Loic Constantin, Jean-Marc Heintz, Sylvie Bordère, Lionel Teule-Gay, Yong Feng Lu, Jean-Luc Diot, Renaud de Langlade, Emilien Feuillet

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Abstract

Developing solder joints capable of withstanding high power density, high temperature, and significant thermomechanical stress is essential to further develop electronic device performances. This study demonstrates an effective route of producing dense, robust, and reliable high-temperature Cu–Sn soldering by modifying the interfacial exchange during a transient liquid phase bonding (TLP) process. Our approach thus relies on altering internal phenomena (diffusion and transport of reactive species) rather than classical external TLP bonding parameters (e.g., time, temperature, and pressure). By adding a Cu3Sn-coated layer between Cu and Sn before the TLP process, fast dissolution of Cu in liquid Sn is achieved, altering undesired Cu6Sn5 scallop grain impingement and promoting their uniform growth within the liquid. A bonding and pore formation mechanism of the solder with or without the Cu3Sn-coated layer is proposed based on experimental and theoretical analysis. The developed TLP joint possesses a shear stress resistance of more than 80 MPa with a thermal cycle endurance superior to 1200 (−45–180 °C), making it highly reliable compared to a classical solder joint with shear and thermal cycling resistances of 45 and 500 MPa, respectively. The developed approaches thus provide an easy, affordable, and scalable method of producing a high-temperature and durable Cu–Sn joint for high-power module applications.
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Research context

OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Advanced Welding Techniques Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

CNRS, University of Bordeaux, Bordeaux INP, ICMCB, UPMR 5026, F-33608 Pessac, France

Department of Electrical and Computer Engineering, University of Nebraska—Lincoln, Lincoln, Nebraska 68588-0511, United States

CNRS, University of Bordeaux, Bordeaux INP, I2M, UPMR 5295, F-33608 Pessac, France

Composite Innovation, 2 allée du Doyen Brus, 33600 PESSAC, France

Innoptics, rue François Mitterrand, 33400 Talence, France

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