journal article·2010-03

Preparation of polymorphic ZnO with strong orange luminescence

Gaohui Du, Yongqiang Yang, Tianbao Li, Bingshe Xu

Journal of Materials Science· Volume 45· Issue 6
Publisher page

Abstract

Polymorphic ZnO has been prepared by a solution method at low temperature (40–90 °C) and the product has been characterized by transmission electron microscopy, UV–vis absorption, and photoluminescence spectroscopy. It is found that the morphology and microstructure of ZnO can be tuned by varying the growth temperature and crystallization condition. The as-synthesized product exhibits narrowed band gap and strong orange luminescence at 620 nm, which may arise from the interstitial oxygen ion defect introduced into ZnO in the solution growth process.
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Research context

OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (21)

Show source-provided references
1. O’Regan B, Schwarthz DT, Zakeeruddin SM, Grätzel M (2000) Adv Mater 12:126310.1002/1521-4095(200009)12:17<1263::AID-ADMA1263>3.0.CO;2-T ↗
2. Lin HM, Tzeng SJ, Hsiau PJ, Tsai WL (1998) Nanostruct Mater 10:46510.1016/S0965-9773(98)00087-7 ↗
3. Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P (2001) Science 292:198710.1126/science.1060367 ↗
4. Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu SF, Fuke S, Segawa Y, Ohno H, Koinuma H, Kawasaki M (2005) Nat Mater 4:4210.1038/nmat1284 ↗
5. Ton-That C, Foley M, Phillips RM (2008) Nanotechnology 19:41560610.1088/0957-4484/19/41/415606 ↗
6. Wang ZG, Zu XT, Yang SZ, Wang LM (2006) J Mater Sci 41:3729. doi: 10.1007/s10853-006-7180-910.1007/s10853-006-7180-9 ↗
7. Gao P-X, Ding Y, Wang ZL (2009) Nano Lett 9:13710.1021/nl802682c ↗
8. Liu ZW, Yeo SW, Ong CK (2007) J Mater Sci 42:6489. doi: 10.1007/s10853-007-1557-210.1007/s10853-007-1557-2 ↗
9. Du GH, Xu F, Yuan ZY, Van Tendeloo G (2006) Appl Phys Lett 88:24310110.1063/1.2211007 ↗
10. Nakano Y, Morikawa T, Ohwaki T, Taga Y (2005) Appl Phys Lett 87:05211110.1063/1.2008376 ↗
11. Kim KJ, Park YR (2004) J Appl Phys 96:415010.1063/1.1790570 ↗
12. Qiu X, Li L, Li G (2006) Appl Phys Lett 88:11410310.1063/1.2185617 ↗
13. Anthony SP, Lee JI, Kim JK (2007) Appl Phys Lett 90:10310710.1063/1.2711419 ↗
14. Ziegler E, Heinrich A, Oppermann H, Stover G (1981) Phys Status Solidi A 66:63510.1002/pssa.2210660228 ↗
15. Pearton SJ, Norton DP, Ip K, Heo YW, Steiner T (2005) Prog Mater Sci 50:29310.1016/j.pmatsci.2004.04.001 ↗
16. Ahsanulhaq Q, Kim SH, Kim JH, Hahn YB (2008) Mater Res Bull 43:348310.1016/j.materresbull.2008.01.021 ↗
17. Qian HS, Yu SH, Gong JY, Luo LB, Wen LL (2005) Cryst Growth Des 5:93510.1021/cg049666l ↗
18. Tam KH, Cheung CK, Leung YH, Djurisic AB, Ling CC, Beling CD, Fung S, Kwok WM, Chan WK, Phillips DL, Ding L, Ge WK (2006) J Phys Chem B 110:2086510.1021/jp063239w ↗
19. Wang J, Gao L (2004) J Cryst Growth 262:29010.1016/j.jcrysgro.2003.10.030 ↗
20. Liu M, Kitai AH, Mascher P (1992) J Lumin 54:3510.1016/0022-2313(92)90047-D ↗
21. Wu XL, Siu GG, Fu CL, Ong HC (2001) Appl Phys Lett 78:228510.1063/1.1361288 ↗