Dislocation structures of low-angle boundaries in Nb-doped SrTiO3 bicrystals
Source abstract
Abstract
Dislocation core structures in low-angle boundaries of Nb-doped SrTiO3 bicrystals were investigated by high-resolution electron microscopy. Bicrystals with tilt angles of 2°, 4°, 6° and 8° with respect to the [001] zone axis were prepared by joining two single crystals at 1873 K. All of the boundaries consisted of a regular array of dislocations whose spacing gradually decreased with an increase in tilt angle. Except for the 2° tilt-angle boundary, the dislocation cores exhibited a dissociation from a[010] into two partials of a/2[010] on (100). Furthermore, two kinds of dislocation core structures were observed; Sr–Sr atomic columns and Ti–O atomic columns inside the cores. In addition, it was found that the positioning of adjacent cores along the boundary tended to change from a linear form to a zig-zagg shape as the tilt angle was increased from 4° to 8°. In the case of the linear array, dislocation core structures including Sr–Sr columns or Ti–O columns alternately appear. In contrast, only one core structure was observed in the zig-zagged array. On the other hand, the dislocation cores in the 2°-tilt-angle boundary had another type of dissociation with a/2[110] or a/2[111] partials, which included the twist component at a tilt axis of [001].
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies
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References (14)
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1. M. Fujimoto, Y.-M. Chiang, A. Roshko and W. D. Kingery, J. Am. Ceram. Soc. 68 (1985) C300.10.1111/j.1151-2916.1985.tb15292.x ↗
2. R. Wernicke, “Formation of second-phase layers in SrTiO3 boundary layer capacitors, in Grain Boundary Phenomena in Electronic Ceramics, Advances in Ceramics vol. 1, Edited by L. M. Levinson (American Ceramic Society, Columbus, OH, 1981).
3. W. Heywang, J. Am. Ceram. Soc. 47 (1964) 484.10.1111/j.1151-2916.1964.tb13795.x ↗
4. G. H. Jonker, Solid State Electron. 7 (1964) 895.10.1016/0038-1101(64)90068-1 ↗
5. D. Hennings, R. Janssen and P. Reynen, J. Am. Ceram. Soc. 70 (1987) 23.10.1111/j.1151-2916.1987.tb04847.x ↗
6. Y.-I. Jung, S.-Y. Choi and S.-J. L. Kang, ibid. 86 (2003) 2228.10.1111/j.1151-2916.2003.tb03640.x ↗
7. S.-Y. Choi and S.-J. L. Kang, Acta Mater. 52 (2004) 2973.10.1016/j.actamat.2004.03.001 ↗
8. H. Nemoto and I. Oda, J. Am. Ceram. Soc. 63 (7/8) (1980) 398.10.1111/j.1151-2916.1980.tb10199.x ↗
9. K. Hayashi, T. Yamamoto and T. Sakuma, ibid. 79 (1996) 1669.10.1111/j.1151-2916.1996.tb08780.x ↗
10. M. Kuwabara, K. Morimo and T. Matsunaga, ibid. 79 (1996) 997.10.1111/j.1151-2916.1996.tb08538.x ↗
11. T. Yamamoto, F. Oba, Y. Ikuhara and T. Sakuma, Mater. Trans. 43 (2002) 1537.10.2320/matertrans.43.1537 ↗
12. Z. Zhang, W. Sigle and M. Rühle, Phys. Rev. B 66 (2002) 094108.10.1103/PhysRevB.66.094108 ↗
13. Z. Zhang, W. Sigle, W. Kurtz and M. Rühle, Phys. Rev. B 66 (2002) 214112.10.1103/PhysRevB.66.214112 ↗
14. A. P. Sutton and R. W. Balluffi, (eds.) “Interfaces in Crystalline Materials,” (Clarendon Press, Oxford, 1995).