Role of vacancy defects on the lattice thermal conductivity in In2O3 thermoelectric nanocrystals: a positron annihilation study
Source abstract
Abstract
High purity $$\hbox {In}_2\hbox {O}_3$$ nanopowders were subjected to different thermal treatments to investigate the role of defects on the lattice thermal conductivity. The powders were first treated by spark plasma sintering (SPS) at $$700\,\circ\hbox {C}$$ and annealed in air between 700 and $$1300\,\circ\hbox {C}$$ . X-ray diffraction measurements show that the samples are single phase, and the diffraction peaks become sharper with increasing of annealing temperature, indicating improvement in crystallinity and increase in grain size. The $$\hbox {In}_2\hbox {O}_3$$ nanopowders were also treated by SPS sintering at different temperatures without subsequent annealing. On the contrary, the average grain size of $$\hbox {In}_2\hbox {O}_3$$ treated by SPS has no obvious change with the increase in sintering temperatures. Positron annihilation measurements reveal large amounts of monovacancies and vacancy clusters in the $$\hbox {In}_2\hbox {O}_3$$ nanocrystals. The monovacancies gradually recover and the vacancy clusters transform into smaller vacancies with increasing annealing or sintering temperatures. The lattice thermal conductivity increases with the increase in annealing or sintering temperature, which shows close correlation with the recovery of vacancy defects after heat treatment. This gives us strong evidence that vacancy defects play an important role on the suppression of lattice thermal conductivity in nanostructured thermoelectric materials.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (49)
Show source-provided references
1. Nolas GH, Sharp GJ, Goldsmid HJ (2001) Thermoelectrics. Springer, Berlin10.1007/978-3-662-04569-5 ↗
2. Venkatasubramanian R, Siivola E, Colpitts T, O’Quinn B (2001) Thin-film thermoelectric devices with high room-temperature figures of merit. Nature 413:597–60210.1038/35098012 ↗
3. Bell LE (2008) Cooling, heating, generating power, and recovering waste heat with thermoelectric systems. Science 321:1457–146110.1126/science.1158899 ↗
4. Wang Y, Sui Y, Wang XJ, Su WH, Liu XY (2010) Enhanced high temperature thermoelectric characteristics of transition metals doped $${\text{Ca}}_3{\text{Co}}_4{\text{O}}9+\delta $$ Ca 3 Co 4 O 9 + δ by cold high-pressure fabrication. J Appl Phys 107:03370810.1063/1.3291125 ↗
5. Mahan GD (1997) Good thermoelectrics. Solid State Phys 51:81–15710.1016/S0081-1947(08)60190-3 ↗
6. Beekman M, Morelli DT, Nolas GS (2015) Better thermoelectrics through glass-like crystals. Nat Mater 14:1182–118510.1038/nmat4461 ↗
7. Callaway J, von Baeyer HC (1960) Effect of point imperfections on lattice thermal conductivity. Phys Rev 120:1149–115410.1103/PhysRev.120.1149 ↗
8. Klemens PG (1955) The scattering of low-frequency lattice waves by static imperfections. Proc Phys Soc Sect A 68:1113–112810.1088/0370-1298/68/12/303 ↗
9. Abeles B (1963) Lattice thermal conductivity of disordered semiconductor alloys at high temperatures. Phys Rev 131:1906–191110.1103/PhysRev.131.1906 ↗
10. Pei YZ, Morelli DT (2009) Vacancy phonon scattering in thermoelectric $${\text{In}}_2{\text{Te}}_3$$ In 2 Te 3 CInSb solid solutions. Appl Phys Lett 94:12211210.1063/1.3109788 ↗
11. Dasgupta T, Stiewe C, Hassdorf R, Zou AJ, Boettcher L, Mueller E (2011) Effect of vacancies on the thermoelectric properties of $${\text{Mg}}_2{\text{Si}}1-x{\text{Sb}}_x$$ Mg 2 Si 1 - x Sb x (0 $$\le $$ ≤ x $$\le $$ ≤ 0.1). Phys Rev B 83:23520710.1103/PhysRevB.83.235207 ↗
12. Zhu GH, Lan YC, Wang H, Joshi G, Hao Q, Chen G, Ren ZF (2011) Effect of selenium deficiency on the thermoelectric properties of $$n$$ n -type $${\text{In}}4{\text{Se}}3- x$$ In 4 Se 3 - x compounds. Phys Rev B 83:11520110.1103/PhysRevB.83.115201 ↗
13. Ji HS, Kim H, Lee C, Rhyee JS, Kim MH, Kaviany M, Shim JH (2013) Effect of selenium deficiency on the thermoelectric properties of n-type $${\text{In}}_4{\text{Se}}3-x$$ In 4 Se 3 - x compounds. Phys Rev B 87:12511110.1103/PhysRevB.87.125111 ↗
14. Popuri SR, Scott AJM, Downie RA, Hall MA, Suard E, Decourt R, Pollet M, Bos JWG (2014) Glass-like thermal conductivity in $${\text{SrTiO}}3$$ SrTiO 3 thermoelectrics induced by A-site vacancies. RSC Adv 4:33720–3372310.1039/C4RA06871H ↗
15. Bennett NS, Wight NM, Popuri SR, Bosb JWG (2015) Efficient thermoelectric performance in silicon nano-films by vacancy-engineering. Nano Energy 16:350–35610.1016/j.nanoen.2015.07.007 ↗
16. Li W, Lin SQ, Zhang XY, Chen ZW, Xu XF, Pei YZ (2016) Thermoelectric properties of $${\text{Cu}}_2{\text{SnSe}}_4$$ Cu 2 SnSe 4 with intrinsic vacancy. Chem Mater 28:6227–623210.1021/acs.chemmater.6b02416 ↗
17. Pichanusakorn P, Bandaru P (2010) Nanostructured thermoelectrics. Mater Sci Eng R 67:19–6310.1016/j.mser.2009.10.001 ↗
18. Wu Y, Finefrock SW, Yang HR (2012) Nanostructured thermoelectric: opportunities and challenges. Nano Energy 1:651–65310.1016/j.nanoen.2012.08.001 ↗
19. Alam H, Ramakrishna S (2013) A review on the enhancement of figure of merit from bulk to nano-thermoelectric materials. Nano Energy 2:190–21210.1016/j.nanoen.2012.10.005 ↗
20. Fitriani OR, Long BD, Barma MC, Riaz M, Sabri MFM, Said SM, Saidur R (2016) A review on nanostructures of high-temperature thermoelectric materials for waste heat recovery. Renew Sustain Energy Rev 64:635–65910.1016/j.rser.2016.06.035 ↗
21. Ren GK, Lan JL, Zeng CC, Liu YC, Zhan B, Butt S, Lin YH, Nan CW (2015) High performance oxides-based thermoelectric materials. JOM 67:211–22110.1007/s11837-014-1218-2 ↗
22. Guilmeau E, Berardan D, Simon C, Maignan A, Raveau B, Ovono D, Delorme F (2009) Tuning the transport and thermoelectric properties of $${\text{In}}2{\text{O}}3$$ In 2 O 3 bulk ceramics through doping at In-site. J Appl Phys 106:05371510.1063/1.3197064 ↗
23. Lan JL, Lin YH, Liu Y, Xu SL, Nan CW (2012) High thermoelectric performance of nanostructured $${\text{In}}2{\text{O}}3$$ In 2 O 3 -based ceramics. J Am Ceram Soc 95:2465–246910.1111/j.1551-2916.2012.05284.x ↗
24. Dupasquier A, Mills AP Jr (1995) Positron spectroscopy of solids. IOS Press, Amsterdam
25. Krause-Rehberg R, Leipner HS (1999) Positron annihilation in semiconductors, defect studies, springer series in solid-state sciences, vol 127. Springer, Berlin
26. Nambissan PMG, Upadhyay C, Verma HC (2003) Positron lifetime spectroscopic studies of nanocrystalline $${\text{ZnFe}}_2{\text{O}}_4$$ ZnFe 2 O 4 . J Appl Phys 93:6320–632610.1063/1.1569973 ↗
27. Chakrabarti S, Chaudhuri S, Nambissan PMG (2005) Positron annihilation lifetime changes across the structural phase transition in nanocrystalline $${\text{Fe}}_2{\text{O}}_3$$ Fe 2 O 3 . Phys Rev B 71:06410510.1103/PhysRevB.71.064105 ↗
28. Biswas S, Kar S, Chaudhuri S, Nambissan PMG (2006) Positron annihilation studies of defects and interfaces in ZnS nanostructures of different crystalline and morphological features. J Chem Phys 125:16471910.1063/1.2354479 ↗
29. Dutta S, Chattopadhyay S, Jana D, Banerjee A, Manik S, Pradhan SK, Sutradhar M, Sarkar A (2006) Annealing effect on nano-ZnO powder studied from positron lifetime and optical absorption spectroscopy. J Appl Phys 100:11432810.1063/1.2401311 ↗
30. Mishra AK, Chaudhuri SK, Mukherjee S, Priyam A, Saha A, Das D (2007) Characterization of defects in ZnO nanocrystals: photoluminescence and positron annihilation spectroscopic studies. J Appl Phys 102:10351410.1063/1.2817598 ↗
31. Ghoshal T, Biswas S, Kar S, Chaudhuri S, Nambissan PMG (2008) Positron annihilation spectroscopic studies of solvothermally synthesized ZnO nanobipyramids and nanoparticles. J Chem Phys 128:07470210.1063/1.2827866 ↗
32. Wang D, Chen ZQ, Wang DD, Qi N, Gong J, Cao CY, Tang Z (2010) Positron annihilation study of the interfacial defects in ZnO nanocrystals: correlation with ferromagnetism. J Appl Phys 107:02352410.1063/1.3291134 ↗
33. Chaudhuri SK, Ghosh M, Das D, Raychaudhuri AK (2010) Probing defects in chemically synthesized ZnO nanostrucures by positron annihilation and photoluminescence spectroscopy. J Appl Phys 108:06431910.1063/1.3483247 ↗
34. Cullity BD (1978) Elements of X-ray diffraction, vol 9. Addison-Wesley, Philippines, p 284
35. Kirkegaard P, Pederson NJ, Eldrup M (1989) $${\text{Ris}}\phi $$ Ris ϕ Report M2740; $${\text{Ris}}\phi $$ Ris ϕ National Laboratory: DK-4000 Roskilde, Denmark
36. Sanyal D, Banerjee D, De U (1998) Probing ( $${\text{Bi}}0.92{\text{Pb}}0.17)_2{\text{Sr}}1.91{\text{Ca}}2.03{\text{Cu}}3.06{\text{O}}10+\delta$$ Bi 0.92 Pb 0.17 ) 2 Sr 1.91 Ca 2.03 Cu 3.06 O 10 + δ superconductors from 30 to 300 K by positron-lifetime measurements. Phys Rev B 58:15226–1523010.1103/PhysRevB.58.15226 ↗
37. de la Cruz RM, Pareja R, Gonzalez R, Boatner LA, Chen Y (1992) Effect of thermochemical reduction on the electrical, optical-absorption, and positron-annihilation characteristics of ZnO crystals. Phys Rev B 45:6581–658610.1103/PhysRevB.45.6581 ↗
38. Korhonen E, Tuomisto F, Bierwagen O, Speck JS, Galazka Z (2014) Compensating vacancy defects in Sn- and Mg-doped $${\text{In}}_2{\text{O}}_3$$ In 2 O 3 . Phys Rev B 90:24530710.1103/PhysRevB.90.245307 ↗
39. Puska MJ, Nieminen RM (1994) Theory of positrons in solids and on solid surfaces. Rev Mod Phys 66:841–89710.1103/RevModPhys.66.841 ↗
40. Puska MJ, Nieminen RM (1983) Defect spectroscopy with positrons: a general calculational method. J Phys F Met Phys 13:333–34610.1088/0305-4608/13/2/009 ↗
41. Tomita T, Yamashita K, Hayafuji Y, Adachi H (2005) The origin of n-type conductivity in undoped $${\text{In}}_2{\text{O}}_3$$ In 2 O 3 . Appl Phys Lett 87:05191110.1063/1.2001741 ↗
42. Takashiri M, Miyazaki K, Tanaka S, Kurosaki J, Nagai D, Tsukamoto H (2008) Effect of grain size on thermoelectric properties of n-type nanocrystalline bismuth-telluride based thin films. J Appl Phys 104:08430210.1063/1.2990774 ↗
43. Takashiri M, Borca-Tasciuc T, Jacquot A, Miyazaki K, Chen G (2006) Structure and thermoelectric properties of boron doped nanocrystalline $${\text{Si}}0.8{\text{Ge}}0.2$$ Si 0.8 Ge 0.2 thin film. J Appl Phys 100:5431510.1063/1.2337392 ↗
44. Wang XW, Lee H, Lan YC, Zhu GH, Joshi G, Wang DZ, Yang J, Muto AJ, Tang MY, Klatsky J, Song S, Dresselhaus MS, Chen G, Ren ZF (2008) Enhanced thermoelectric figure of merit in nanostructured n-type silicon germanium bulk alloy. Appl Phys Lett 93:19312110.1063/1.3027060 ↗
45. Poudel B, Hao Q, Ma Y, Lan YC, Minnich A, Yu B, Yan X, Wang DZ, Muto A, Vashaee D, Chen XY, Liu JM, Dresselhaus MS, Chen G, Ren ZF (2008) High-thermoelectric performance of nanostructured bismuth antimony telluride bulk alloys. Science 320:634–63810.1126/science.1156446 ↗
46. Bux SK, Blair RG, Gogna PK, Lee H, Chen G, Dresselhaus MS, Kaner RB, Fleurial JP (2009) Nanostructured bulk silicon as an effectivethermoelectric material, fleurial. Adv Funct Mater 19:2445–245210.1002/adfm.200900250 ↗
47. Chiritescu C, Mortensen C, Cahill DG, Johnson D, Zschack P (2009) Lower limit to the lattice thermal conductivity of nanostructured $${\text{Bi}}2{\text{Te}}3$$ Bi 2 Te 3 -based materials. J Appl Phys 106:07350310.1063/1.3226884 ↗
48. Foley BM, Brown-Shaklee HJ, Duda JC, Cheaito R, Gibbons BJ, Medlin D, Ihlefeld JF, Hopkins PE (2012) Thermal conductivity of nano-grained $${\text{SrTiO}}_3$$ SrTiO 3 thin films. Appl Phys Lett 101:23190810.1063/1.4769448 ↗
49. Lan YC, Minnich AJ, Chen G, Ren ZF (2010) Enhancement of thermoelectric figure-of-merit by a bulk nanostructuring approach. Adv Funct Mater 20:357–37610.1002/adfm.200901512 ↗