Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector
Source abstract
Abstract
Leakage current, that causes interferences in the read/write operation, arising from neighboring unselected or half-selected memory cells is considered as one of the main hurdles to be overcome to increase density of cross-point memory arrays. In this work, the common drawbacks for a Ag-based steep-slope threshold switching selector, threshold voltage variability, and poor cycling endurance have been mended. This is achieved by lightly doping the switching layer with Ag instead of implementing the Ag active electrode that acts as a reservoir, which provides unlimited access of Ag to the selector medium. Here, we doped polycrystalline ZnO with Ag, fabricated by facile electrochemical deposition, making a prototypical candidate for the crystalline switching layer. When the amount of Ag is limited by doping, switching characteristics, that is, threshold voltage variability and cycling endurance, are improved. Lastly, different mechanisms causing a threshold switching device to fail are also discussed for the two different test vehicles. It has been found that an unlimited Ag source causes the devices to fail in a short-circuited manner, and a limited Ag source results in devices to fail in an open-circuited manner, after repeated measurements.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States
Department of Electrical Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States
Department of Electrical Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Pohang 790-784, Republic of Korea
Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
Department of Electrical and Electronics Engineering, Kangwon National University, 1 Gangwondaehakgil, Chuncheon, Gangwon-do 24341, Republic of Korea
Interdisciplinary Graduate Program in BIT Medical Convergence, Kangwon National University, 1 Gangwondaehakgil, Chuncheon, Gangwon-do 24341, Republic of Korea
Funding
Kangwon National University · Semiconductor Research Corporation · Korea Institute for Advancement of Technology
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