Optical properties of TlInS2 layered single crystals near the absorption edge
Source abstract
Abstract
The sample thickness effect on the optical properties of TlInS2 layered crystals has been investigated at room temperature. The absorption coefficient of the samples calculated from the experimental transmittance and reflectance in the photon energy range of 1.10–3.10 eV has two absorption regions. The first is a long-wavelength region of 1.16–1.28 eV. The second region lies above 2.21 eV with a thickness-dependent indirect band gap. The energy gap decreases from 2.333 to 2.255 eV as the sample thickness increases from 27 to 66 μm. The differential spectra of absorption coefficient demonstrates the existence of a thickness-dependent impurity level being lowered from 2.360 to 2.307 eV as sample thickness increases from 27 to 66 μm.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Solid-state spectroscopy and crystallography · Crystal Structures and Properties · Nonlinear Optical Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
Show source-provided references
1. N. KALKAN, D. PAPADOPOULOS, A. N. ANAGNOSTOPOULOS and J. SPYRIDELIS, Mat. Res. Bull. 28 (1993) 693.10.1016/0025-5408(93)90113-R ↗
2. M. P. HANIAS, A. N. ANAGNOSTOPOULOS, K. KAMBAS and J. SPYRIDELIS, ibid. 27 (1992) 25.10.1016/0025-5408(92)90039-3 ↗
3. B. BALTRAMEYUNAS, D. VELETSKAS, N. ZEINALOV and I. KAPTURAUSKAS, Sov. Phys. Semicond. 16 (1982) 1085.
4. S. R. SAMEDOV and O. BAYKAN, Int. J. Infrared and Millimeter Waves 24 (2003) 231.10.1023/A:1021946821280 ↗
5. K. R. ALLAKHVERDIEV, Solid State Commun. 111 (1999) 253.10.1016/S0038-1098(99)00202-1 ↗
6. A. AYDINLI, N. M. GASANLY, I. YILMAZ and A. SERPENGUZEL, Semicond. Sci. Technol. 14 (1999) 599.10.1088/0268-1242/14/7/302 ↗
7. A. F. QASRAWI and N. M. GASANLY, Cryst. Res. Technol. 39 (2004) 439.10.1002/crat.200310208 ↗
8. Idem., Phys. Stat. Sol. (a) 199 (2003) 277.10.1002/pssa.200306668 ↗
9. G. B. ABDULLAEV, G. I. ABUTALYBOV, A. A. ALIEV, L. S. LARIONKINA, I. K. NEIMAN-ZADE and E. Y. SALAEV, JETP Lett. 38 (1984) 632.
10. G. I. ABUTALYBOV, S. G. ABDULLAEVA and N. M. ZEINALOV, Sov. Phys. Semicond. 16 (1982) 1348.
11. G. I. ABUTALYBOV, A. A. ALIEV, L. S. LARIONKINA, I. K. NEIMAN-ZADE and E. Y. SALAEV, Sov. Phys. Solid State 26 (1984) 511.
12. M. Y. BAKIROV, N. M. ZEINALOV, S. G. ABDULLAYEVA, V. A. GAJIYEV and E. M. GOJAYEV, Solid Stat. Commun. 44 (1982) 205.10.1016/0038-1098(82)90431-8 ↗
13. G. A. GAMAL, Semicond. Sci. Technol. 13 (1998) 185.10.1088/0268-1242/13/2/005 ↗
14. J. I. PANKOVE, “Optical processes on semiconductors”, (Prentice-Hall, New Jersey, 1971), p. 93.
15. A. E. RAKHSHANI and A. S. AL-AZAB, J. Phys.: Condens. Matter 12 (2000) 8745.
16. N. LEJMI and O. SAVADOGO, Sol. Energy Mater. Sol. Cells 70 (2001) 71.10.1016/S0927-0248(00)00412-8 ↗
17. A. A. KUHAIMI, Vacuum 51 (1998) 349.10.1016/S0042-207X(98)00112-2 ↗
18. O. ZELAYA-ANGEL, J. J. ALVARADO-GIL, R. LOZADA-MORALES, H. VARGAS and A. F. DA SILVA, Appl. Phys. Lett. 64 (1994) 291.10.1063/1.111184 ↗
19. O. ZELAYA-ANGEL, L. HERNANDEZ, O. DE MELO, J. J. ALVARADO-GIL, R. LOZADA-MORALES, C. FALCONY, H. VARGAS and R. RAMIREZ-BON, Vacuum. 46 (1995) 1083.10.1016/0042-207X(95)00111-5 ↗
20. K. R. ALLAKHVERDIEV, T. G. MAMMADOV, R. A. SULEYMANOV and N. Z. GASANOV, J. Phys.: Condens. Matter. 15 (2003) 1291.
21. M. SCHLUTTER, Nuovo Cimento. 13 (1973) 31.