A novel two-stage synthesis for 3C–SiC nanowires by carbothermic reduction and their photoluminescence properties
Source abstract
Abstract
A large quantity of 3C–SiC nanowires (SiCnws) with high purity were fabricated via carbothermic reduction method combined with a novel two-stage temperature program. At the first temperature stage, the reactants were kept at 1600 °C for 4 h to promote the formation of SiC nucleus and SiO intermediate gas. Then they were cooled to 1350 °C for 2 h at the second stage for the growth of SiCnws with fewer defects. Compared with the conventional single temperature method at 1600 °C for 6 h, the product prepared by this new strategy exhibits large yield and high purity with a narrow diameter range. As for the reaction mechanism, “solid–solid” and “solid–vapor” reactions occurring between SiO2, SiO and C dominate at the first stage. While “vapor–vapor” reaction between SiO and CO plays an important role at the second stage. Furthermore, photoluminescence (PL) properties were measured under the room temperature. A sharp violet light emission peak with a significant blue shift is observed at 401 nm compared to bulk 3C–SiC.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (53)
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